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Article: Alkali Chlorides for the Suppression of the Interfacial Recombination in Inverted Planar Perovskite Solar Cells

TitleAlkali Chlorides for the Suppression of the Interfacial Recombination in Inverted Planar Perovskite Solar Cells
Authors
KeywordsAlkali chlorides
Halide perovskites
Interfacial recombination
Nickel oxide
Issue Date2019
PublisherWiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1614-6840
Citation
Advanced Energy Materials, 2019, v. 9 n. 19, article no. 1803872, p. 1-10 How to Cite?
AbstractIn this work, significant suppression of the interfacial recombination by facile alkali chloride interface modification of the NiOx hole transport layer in inverted planar perovskite solar cells is achieved. Experimental and theoretical results reveal that the alkali chloride interface modification results in improved ordering of the perovskite films, which in turn reduces defect/trap density, causing reduced interfacial recombination. This leads to a significant improvement in the open‐circuit voltage from 1.07 eV for pristine NiOx to 1.15 eV for KCl‐treated NiOx, resulting in a power conversion efficiency approaching 21%. Furthermore, the suppression of the ion diffusion in the devices is observed, as evidenced by stable photoluminescence (PL) under illumination and high PL quantum efficiency with alkali chloride treatment, as opposed to the luminescence enhancement and low PL quantum efficiency observed for perovskite on pristine NiOx. The suppressed ion diffusion is also consistent with improved stability of the devices with KCl‐treated NiOx. Thus, it is demonstrated that a simple interfacial modification is an effective method to not only suppress interfacial recombination but also to suppress ion migration in the layers deposited on the modified interface due to improved interface ordering and reduced defect density.
Persistent Identifierhttp://hdl.handle.net/10722/272297
ISSN
2023 Impact Factor: 24.4
2023 SCImago Journal Rankings: 8.748
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, W-
dc.contributor.authorZhou, Y-
dc.contributor.authorChen, G-
dc.contributor.authorWu, Y-
dc.contributor.authorTu, B-
dc.contributor.authorLiu, F-
dc.contributor.authorHuang, L-
dc.contributor.authorNg, AMC-
dc.contributor.authorDjurisic, AB-
dc.contributor.authorHe, Z-
dc.date.accessioned2019-07-20T10:39:30Z-
dc.date.available2019-07-20T10:39:30Z-
dc.date.issued2019-
dc.identifier.citationAdvanced Energy Materials, 2019, v. 9 n. 19, article no. 1803872, p. 1-10-
dc.identifier.issn1614-6832-
dc.identifier.urihttp://hdl.handle.net/10722/272297-
dc.description.abstractIn this work, significant suppression of the interfacial recombination by facile alkali chloride interface modification of the NiOx hole transport layer in inverted planar perovskite solar cells is achieved. Experimental and theoretical results reveal that the alkali chloride interface modification results in improved ordering of the perovskite films, which in turn reduces defect/trap density, causing reduced interfacial recombination. This leads to a significant improvement in the open‐circuit voltage from 1.07 eV for pristine NiOx to 1.15 eV for KCl‐treated NiOx, resulting in a power conversion efficiency approaching 21%. Furthermore, the suppression of the ion diffusion in the devices is observed, as evidenced by stable photoluminescence (PL) under illumination and high PL quantum efficiency with alkali chloride treatment, as opposed to the luminescence enhancement and low PL quantum efficiency observed for perovskite on pristine NiOx. The suppressed ion diffusion is also consistent with improved stability of the devices with KCl‐treated NiOx. Thus, it is demonstrated that a simple interfacial modification is an effective method to not only suppress interfacial recombination but also to suppress ion migration in the layers deposited on the modified interface due to improved interface ordering and reduced defect density.-
dc.languageeng-
dc.publisherWiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1614-6840-
dc.relation.ispartofAdvanced Energy Materials-
dc.rightsThis is the peer reviewed version of the following article: Advanced Energy Materials, 2019, v. 9 n. 19, article no. 1803872, p. 1-10, which has been published in final form at https://doi.org/10.1002/aenm.201803872. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectAlkali chlorides-
dc.subjectHalide perovskites-
dc.subjectInterfacial recombination-
dc.subjectNickel oxide-
dc.titleAlkali Chlorides for the Suppression of the Interfacial Recombination in Inverted Planar Perovskite Solar Cells-
dc.typeArticle-
dc.identifier.emailLiu, F: liufz@hku.hk-
dc.identifier.emailDjurisic, AB: dalek@hku.hk-
dc.identifier.authorityDjurisic, AB=rp00690-
dc.description.naturepostprint-
dc.identifier.doi10.1002/aenm.201803872-
dc.identifier.scopuseid_2-s2.0-85063370370-
dc.identifier.hkuros298420-
dc.identifier.volume9-
dc.identifier.issue19-
dc.identifier.spagearticle no. 1803872-
dc.identifier.epagearticle no. 1803872-
dc.identifier.isiWOS:000471339300005-
dc.publisher.placeGermany-
dc.identifier.issnl1614-6832-

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