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Article: Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

TitleSmall contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors
Authors
Issue Date2019
PublisherNature Research (part of Springer Nature): Fully open access journals. The Journal's web site is located at http://www.nature.com/ncomms/index.html
Citation
Nature Communications, 2019, v. 10, article number: 1119 (2019 How to Cite?
AbstractThe contact resistance in organic thin-film transistors (TFTs) is the limiting factor in the development of high-frequency organic TFTs. In devices fabricated in the inverted (bottom-gate) device architecture, staggered (top-contact) organic TFTs have usually shown or are predicted to show lower contact resistance than coplanar (bottom-contact) organic TFTs. However, through comparison of organic TFTs with different gate-dielectric thicknesses based on the small-molecule organic semiconductor 2,9-diphenyl-dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene, we show the potential for bottom-contact TFTs to have lower contact resistance than top-contact TFTs, provided the gate dielectric is sufficiently thin and an interface layer such as pentafluorobenzenethiol is used to treat the surface of the source and drain contacts. We demonstrate bottom-contact TFTs fabricated on flexible plastic substrates with record-low contact resistance (29 Ωcm), record subthreshold swing (62 mV/decade), and signal-propagation delays in 11-stage unipolar ring oscillators as short as 138 ns per stage, all at operating voltages of about 3 V.
Persistent Identifierhttp://hdl.handle.net/10722/272698
ISSN
2020 Impact Factor: 14.919
2015 SCImago Journal Rankings: 6.539
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorBorchert, J-
dc.contributor.authorPeng, B-
dc.contributor.authorLetzkus, F-
dc.contributor.authorBurghartz, J-
dc.contributor.authorChan, KL-
dc.contributor.authorZojer, KL-
dc.contributor.authorLedwigs, S-
dc.contributor.authorKlauk, H-
dc.date.accessioned2019-08-06T09:14:51Z-
dc.date.available2019-08-06T09:14:51Z-
dc.date.issued2019-
dc.identifier.citationNature Communications, 2019, v. 10, article number: 1119 (2019-
dc.identifier.issn2041-1723-
dc.identifier.urihttp://hdl.handle.net/10722/272698-
dc.description.abstractThe contact resistance in organic thin-film transistors (TFTs) is the limiting factor in the development of high-frequency organic TFTs. In devices fabricated in the inverted (bottom-gate) device architecture, staggered (top-contact) organic TFTs have usually shown or are predicted to show lower contact resistance than coplanar (bottom-contact) organic TFTs. However, through comparison of organic TFTs with different gate-dielectric thicknesses based on the small-molecule organic semiconductor 2,9-diphenyl-dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene, we show the potential for bottom-contact TFTs to have lower contact resistance than top-contact TFTs, provided the gate dielectric is sufficiently thin and an interface layer such as pentafluorobenzenethiol is used to treat the surface of the source and drain contacts. We demonstrate bottom-contact TFTs fabricated on flexible plastic substrates with record-low contact resistance (29 Ωcm), record subthreshold swing (62 mV/decade), and signal-propagation delays in 11-stage unipolar ring oscillators as short as 138 ns per stage, all at operating voltages of about 3 V.-
dc.languageeng-
dc.publisherNature Research (part of Springer Nature): Fully open access journals. The Journal's web site is located at http://www.nature.com/ncomms/index.html-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleSmall contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors-
dc.typeArticle-
dc.identifier.emailPeng, B: brpe@hku.hk-
dc.identifier.emailChan, KL: pklc@hku.hk-
dc.identifier.authorityChan, KL=rp01532-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41467-019-09119-8-
dc.identifier.pmid30850715-
dc.identifier.scopuseid_2-s2.0-85062338197-
dc.identifier.hkuros299941-
dc.identifier.volume10-
dc.identifier.spagearticle number: 1119 (2019-
dc.identifier.epagearticle number: 1119 (2019-
dc.identifier.isiWOS:000460631100004-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2041-1723-

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