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Article: Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN

TitleDopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
Authors
BAO, YXu, S
KeywordsGallium nitride
Hole concentration
Yellow luminescence
Issue Date2019
PublisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf
Citation
ACS Omega, 2019, v. 4 n. 13, p. 15401-15406 How to Cite?
DOI: http://dx.doi.org/10.1021/acsomega.9b01394
AbstractDopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 104 V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values.
Persistent Identifierhttp://hdl.handle.net/10722/279477
ISSN
2470-1343
2021 Impact Factor: 4.132
2020 SCImago Journal Rankings: 0.779
PubMed Central ID
PMC6761620
ISI Accession Number ID
WOS:000488852700009

 

DC FieldValueLanguage
dc.contributor.authorBAO, Y-
dc.contributor.authorXu, S-
dc.date.accessioned2019-11-01T07:18:07Z-
dc.date.available2019-11-01T07:18:07Z-
dc.date.issued2019-
dc.identifier.citationACS Omega, 2019, v. 4 n. 13, p. 15401-15406-
dc.identifier.issn2470-1343-
dc.identifier.urihttp://hdl.handle.net/10722/279477-
dc.description.abstractDopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 104 V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values.-
dc.languageeng-
dc.publisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf-
dc.relation.ispartofACS Omega-
dc.rightsThis is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.-
dc.subjectGallium nitride-
dc.subjectHole concentration-
dc.subjectYellow luminescence-
dc.titleDopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN-
dc.typeArticle-
dc.identifier.emailXu, S: sjxu@hku.hk-
dc.identifier.authorityXu, S=rp00821-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1021/acsomega.9b01394-
dc.identifier.pmid31572839-
dc.identifier.pmcidPMC6761620-
dc.identifier.scopuseid_2-s2.0-85073146312-
dc.identifier.hkuros308513-
dc.identifier.volume4-
dc.identifier.issue13-
dc.identifier.spage15401-
dc.identifier.epage15406-
dc.identifier.isiWOS:000488852700009-
dc.publisher.placeUnited States-
dc.identifier.issnl2470-1343-

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