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Article: Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO
Title | Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO |
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Authors | |
Keywords | asymmetric electrodes MgZnO self-powered UV PD |
Issue Date | 2019 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd |
Citation | Journal of Physics D: Applied Physics, 2019, v. 52 n. 50, p. article no. 505112 How to Cite? |
Abstract | A back-to-back asymmetric Schottky self-powered UV photodetector (PD) with fast speed was realized by a facile combination of ternary alloy MgZnO film and asymmetric Au electrodes. The high-crystalline-quality MgZnO films were synthesized by metal organic chemical vapor deposition. Due to the incorporation of Mg, the band gap of MgZnO film was confirmed to be 3.76 eV. In addition, owing to the large Schottky barrier difference between the active layer and the two asymmetric Au electrodes, the responsivity of the device could reach up to 2.22 mA W−1 at the optical wavelength of 330 nm without any power supply, and with a sharp cutoff at the wavelength of 343 nm. The device exhibits a very low dark current of 247 pA at −5 V. More interestingly, the decay time of our device is only around 92 µs, which is much quicker than any other previously reported UV PDs even with bias voltage applied. Our findings provide a promising approach to realize a high-performance self-powered UV PD. |
Persistent Identifier | http://hdl.handle.net/10722/280378 |
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 0.681 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, H-Y | - |
dc.contributor.author | Sun, X-Y | - |
dc.contributor.author | Yao, D-S | - |
dc.contributor.author | Xie, X-H | - |
dc.contributor.author | Ling, FCC | - |
dc.contributor.author | Su, S-C | - |
dc.date.accessioned | 2020-02-07T07:40:11Z | - |
dc.date.available | 2020-02-07T07:40:11Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Journal of Physics D: Applied Physics, 2019, v. 52 n. 50, p. article no. 505112 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10722/280378 | - |
dc.description.abstract | A back-to-back asymmetric Schottky self-powered UV photodetector (PD) with fast speed was realized by a facile combination of ternary alloy MgZnO film and asymmetric Au electrodes. The high-crystalline-quality MgZnO films were synthesized by metal organic chemical vapor deposition. Due to the incorporation of Mg, the band gap of MgZnO film was confirmed to be 3.76 eV. In addition, owing to the large Schottky barrier difference between the active layer and the two asymmetric Au electrodes, the responsivity of the device could reach up to 2.22 mA W−1 at the optical wavelength of 330 nm without any power supply, and with a sharp cutoff at the wavelength of 343 nm. The device exhibits a very low dark current of 247 pA at −5 V. More interestingly, the decay time of our device is only around 92 µs, which is much quicker than any other previously reported UV PDs even with bias voltage applied. Our findings provide a promising approach to realize a high-performance self-powered UV PD. | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd | - |
dc.relation.ispartof | Journal of Physics D: Applied Physics | - |
dc.rights | Journal of Physics D: Applied Physics. Copyright © Institute of Physics Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | asymmetric electrodes | - |
dc.subject | MgZnO | - |
dc.subject | self-powered | - |
dc.subject | UV PD | - |
dc.title | Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO | - |
dc.type | Article | - |
dc.identifier.email | Ling, FCC: ccling@hkucc.hku.hk | - |
dc.identifier.authority | Ling, FCC=rp00747 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/1361-6463/ab452e | - |
dc.identifier.scopus | eid_2-s2.0-85073817909 | - |
dc.identifier.hkuros | 309054 | - |
dc.identifier.volume | 52 | - |
dc.identifier.issue | 50 | - |
dc.identifier.spage | article no. 505112 | - |
dc.identifier.epage | article no. 505112 | - |
dc.identifier.isi | WOS:000505826600001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0022-3727 | - |