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Article: Dipole Orientation Shift of Ga2Se2 by Quantum Confinement

TitleDipole Orientation Shift of Ga2Se2 by Quantum Confinement
Authors
XIAO, KYan, TCui, X
Keywordsdipole orientation
quantum confinement
Ga2Se2
interlayer coupling
two-dimensional semiconductor
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html
Citation
ACS Nano, 2020, v. 14 n. 1, p. 1027-1032 How to Cite?
DOI: http://dx.doi.org/10.1021/acsnano.9b08524
AbstractIn the family of III–VI monochalcogenides M2X2 (M = gallium, indium; X = sulfur, selenide, etc.), the interlayer interaction and the electronic band edges share the contribution of the same chalcogenide atomic orbits. This makes quantum confinement and interlayer interaction play a subtle role in two-dimensional (2D) monochalcogenides crystals. In this report, we study the direction-resolved photoluminescence of 2D Ga2Se2 at various thicknesses. We observe that the in-plane dipole radiation survives, but out-of-plane dipole radiation fades at 2D limits.
Persistent Identifierhttp://hdl.handle.net/10722/281238
ISSN
1936-0851
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID
WOS:000510531500092

 

DC FieldValueLanguage
dc.contributor.authorXIAO, K-
dc.contributor.authorYan, T-
dc.contributor.authorCui, X-
dc.date.accessioned2020-03-09T09:51:59Z-
dc.date.available2020-03-09T09:51:59Z-
dc.date.issued2020-
dc.identifier.citationACS Nano, 2020, v. 14 n. 1, p. 1027-1032-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/281238-
dc.description.abstractIn the family of III–VI monochalcogenides M2X2 (M = gallium, indium; X = sulfur, selenide, etc.), the interlayer interaction and the electronic band edges share the contribution of the same chalcogenide atomic orbits. This makes quantum confinement and interlayer interaction play a subtle role in two-dimensional (2D) monochalcogenides crystals. In this report, we study the direction-resolved photoluminescence of 2D Ga2Se2 at various thicknesses. We observe that the in-plane dipole radiation survives, but out-of-plane dipole radiation fades at 2D limits.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html-
dc.relation.ispartofACS Nano-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectdipole orientation-
dc.subjectquantum confinement-
dc.subjectGa2Se2-
dc.subjectinterlayer coupling-
dc.subjecttwo-dimensional semiconductor-
dc.titleDipole Orientation Shift of Ga2Se2 by Quantum Confinement-
dc.typeArticle-
dc.identifier.emailYan, T: yantf@hku.hk-
dc.identifier.emailCui, X: xdcui@hku.hk-
dc.identifier.authorityCui, X=rp00689-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.9b08524-
dc.identifier.pmid31799830-
dc.identifier.scopuseid_2-s2.0-85079020888-
dc.identifier.hkuros309252-
dc.identifier.volume14-
dc.identifier.issue1-
dc.identifier.spage1027-
dc.identifier.epage1032-
dc.identifier.isiWOS:000510531500092-
dc.publisher.placeUnited States-
dc.identifier.issnl1936-0851-

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