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Article: Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics

TitleAchieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics
Authors
Keywordsorganic thin-film transistors
hybrid dielectrics
self-assembled monolayers
DPh-BTBT
substrate temperature
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2019, v. 11 n. 30, p. 27104-27111 How to Cite?
AbstractThe properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm2/V s on flexible plastic substrates and 1 cm2/V s on silicon substrates.
Persistent Identifierhttp://hdl.handle.net/10722/282933
ISSN
2019 Impact Factor: 8.758
2015 SCImago Journal Rankings: 2.381
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorAcharya, R-
dc.contributor.authorPeng, B-
dc.contributor.authorChan, PKL-
dc.contributor.authorSchmitz, G-
dc.contributor.authorKlauk, H-
dc.date.accessioned2020-06-05T06:23:12Z-
dc.date.available2020-06-05T06:23:12Z-
dc.date.issued2019-
dc.identifier.citationACS Applied Materials & Interfaces, 2019, v. 11 n. 30, p. 27104-27111-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/282933-
dc.description.abstractThe properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm2/V s on flexible plastic substrates and 1 cm2/V s on silicon substrates.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectorganic thin-film transistors-
dc.subjecthybrid dielectrics-
dc.subjectself-assembled monolayers-
dc.subjectDPh-BTBT-
dc.subjectsubstrate temperature-
dc.titleAchieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics-
dc.typeArticle-
dc.identifier.emailPeng, B: brpe@hku.hk-
dc.identifier.emailChan, PKL: pklc@hku.hk-
dc.identifier.authorityChan, PKL=rp01532-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1021/acsami.9b04361-
dc.identifier.pmid31267732-
dc.identifier.pmcidPMC6750643-
dc.identifier.scopuseid_2-s2.0-85070851022-
dc.identifier.hkuros309983-
dc.identifier.volume11-
dc.identifier.issue30-
dc.identifier.spage27104-
dc.identifier.epage27111-
dc.identifier.isiWOS:000479020300057-
dc.publisher.placeUnited States-
dc.identifier.issnl1944-8244-

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