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Article: Extraordinary role of Bi for improving thermoelectrics in low solubility SnTe-CdTe alloys

TitleExtraordinary role of Bi for improving thermoelectrics in low solubility SnTe-CdTe alloys
Authors
Keywordsthermoelectric materials
SnTe
low solubility
band convergence
defect modulation
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2019, v. 11 n. 29, p. 26093-26099 How to Cite?
AbstractAs an environment-friendly alternative to traditional PbTe, many attempts have recently been made to improve thermoelectric SnTe. Effective strategies are mainly focused on valence band convergence, nanostructuring, interstitial defects, and alloying solubility. In particular, alloying SnTe with CdTe/GeTe triggers an inherent decline of valence band offset effectively owing to a high solubility of ∼20% of CdTe. However, to what level an additional element doping in low-solubility SnTe–CdTe alloys can play a role in enhancing the thermoelectric performance still remains a mystery. Here, a new strategy is shown that unexpected Bi doping, by alloying with only ∼3% CdTe, induces a significant enhancement of the thermoelectric figure of merit ZT to be ∼240% (ZT up to ∼1.3) at 838 K, which is mainly determined by the dramatically reduced lattice thermal conductivity above 800 K deriving from the exotic Bi doping and Cu-interstitial defects. More interestingly, combining experimental and theoretical evidences, the Bi-doping-driven band convergence is also beneficial to the improvement of thermoelectric performance below 800 K. The present findings demonstrate the extraordinary role of Bi for advancing the thermoelectric performance in SnTe alloys.
Persistent Identifierhttp://hdl.handle.net/10722/283250
ISSN
2020 Impact Factor: 9.229
2020 SCImago Journal Rankings: 2.535
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Z-
dc.contributor.authorGuo, X-
dc.contributor.authorTang, J-
dc.contributor.authorXIONG, F-
dc.contributor.authorLi, W-
dc.contributor.authorChen, Y-
dc.contributor.authorAng, R-
dc.date.accessioned2020-06-22T02:54:08Z-
dc.date.available2020-06-22T02:54:08Z-
dc.date.issued2019-
dc.identifier.citationACS Applied Materials & Interfaces, 2019, v. 11 n. 29, p. 26093-26099-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/283250-
dc.description.abstractAs an environment-friendly alternative to traditional PbTe, many attempts have recently been made to improve thermoelectric SnTe. Effective strategies are mainly focused on valence band convergence, nanostructuring, interstitial defects, and alloying solubility. In particular, alloying SnTe with CdTe/GeTe triggers an inherent decline of valence band offset effectively owing to a high solubility of ∼20% of CdTe. However, to what level an additional element doping in low-solubility SnTe–CdTe alloys can play a role in enhancing the thermoelectric performance still remains a mystery. Here, a new strategy is shown that unexpected Bi doping, by alloying with only ∼3% CdTe, induces a significant enhancement of the thermoelectric figure of merit ZT to be ∼240% (ZT up to ∼1.3) at 838 K, which is mainly determined by the dramatically reduced lattice thermal conductivity above 800 K deriving from the exotic Bi doping and Cu-interstitial defects. More interestingly, combining experimental and theoretical evidences, the Bi-doping-driven band convergence is also beneficial to the improvement of thermoelectric performance below 800 K. The present findings demonstrate the extraordinary role of Bi for advancing the thermoelectric performance in SnTe alloys.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectthermoelectric materials-
dc.subjectSnTe-
dc.subjectlow solubility-
dc.subjectband convergence-
dc.subjectdefect modulation-
dc.titleExtraordinary role of Bi for improving thermoelectrics in low solubility SnTe-CdTe alloys-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.9b07222-
dc.identifier.pmid31265233-
dc.identifier.scopuseid_2-s2.0-85070485854-
dc.identifier.hkuros310527-
dc.identifier.volume11-
dc.identifier.issue29-
dc.identifier.spage26093-
dc.identifier.epage26099-
dc.identifier.isiWOS:000477787200049-
dc.publisher.placeUnited States-
dc.identifier.issnl1944-8244-

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