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Article: The origin of additional modes in Raman spectra of ZnO:Sb films

TitleThe origin of additional modes in Raman spectra of ZnO:Sb films
Authors
KeywordsRaman additional modes
Sb-doped ZnO
SbZn defect
Issue Date2020
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2020, v. 593, p. article no. 412256 How to Cite?
AbstractSystematic Raman spectroscopic study was conducted on the wurtzite (002) Sb-doped ZnO films grown by pulsed laser deposition with different Sb doping levels and annealed at different temperatures, with the undoped, Cu-doped and Ga-doped ZnO films for comparison. Three additional Raman modes 235 cm−1, 510 cm−1 and 534 cm−1 were observed only in the Sb-doped ZnO samples but not in the other controls. The vibration mode 235 cm−1was associated with the SbZn-related shallow donor, which was the origin of the n+-conductivity. The 510 cm−1 vibrational mode has been associated with HO in previous literature. However in the current study, the correlation between its intensity and the H abundance was not observed. The 534 cm−1 Raman mode was associated with a Sb-related defect. The variation of the intensities of the Raman modes 235 cm−1 and 510 cm−1 upon annealing and change of Sb composition were discussed.
Persistent Identifierhttp://hdl.handle.net/10722/284594
ISSN
2020 Impact Factor: 2.436
2015 SCImago Journal Rankings: 0.509
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLuo, CQ-
dc.contributor.authorHO, LP-
dc.contributor.authorLing, FCC-
dc.date.accessioned2020-08-07T08:59:53Z-
dc.date.available2020-08-07T08:59:53Z-
dc.date.issued2020-
dc.identifier.citationPhysica B: Condensed Matter, 2020, v. 593, p. article no. 412256-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10722/284594-
dc.description.abstractSystematic Raman spectroscopic study was conducted on the wurtzite (002) Sb-doped ZnO films grown by pulsed laser deposition with different Sb doping levels and annealed at different temperatures, with the undoped, Cu-doped and Ga-doped ZnO films for comparison. Three additional Raman modes 235 cm−1, 510 cm−1 and 534 cm−1 were observed only in the Sb-doped ZnO samples but not in the other controls. The vibration mode 235 cm−1was associated with the SbZn-related shallow donor, which was the origin of the n+-conductivity. The 510 cm−1 vibrational mode has been associated with HO in previous literature. However in the current study, the correlation between its intensity and the H abundance was not observed. The 534 cm−1 Raman mode was associated with a Sb-related defect. The variation of the intensities of the Raman modes 235 cm−1 and 510 cm−1 upon annealing and change of Sb composition were discussed.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb-
dc.relation.ispartofPhysica B: Condensed Matter-
dc.subjectRaman additional modes-
dc.subjectSb-doped ZnO-
dc.subjectSbZn defect-
dc.titleThe origin of additional modes in Raman spectra of ZnO:Sb films-
dc.typeArticle-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.doi10.1016/j.physb.2020.412256-
dc.identifier.scopuseid_2-s2.0-85086407897-
dc.identifier.hkuros311706-
dc.identifier.volume593-
dc.identifier.spagearticle no. 412256-
dc.identifier.epagearticle no. 412256-
dc.identifier.isiWOS:000563749000004-
dc.publisher.placeNetherlands-
dc.identifier.issnl0921-4526-

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