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Article: Inverted planar perovskite solar cells based on CsI-doped PEDOT:PSS with efficiency beyond 20% and small energy loss

TitleInverted planar perovskite solar cells based on CsI-doped PEDOT:PSS with efficiency beyond 20% and small energy loss
Authors
Issue Date2019
Citation
Journal of Materials Chemistry A, 2019, v. 7, n. 38, p. 21662-21667 How to Cite?
Abstract© 2019 The Royal Society of Chemistry. PEDOT:PSS is widely used in perovskite solar cells (PSCs) as the most popular hole transporting layer (HTL). However, p-i-n type inverted planar PSCs based on the PEDOT:PSS HTL typically exhibit up to 200 mV more voltage loss compared to conventional planar PSCs (n-i-p) that generally show open circuit voltages (VOC) of around 1.1 V. In this study, we develop a simple, inexpensive and effective interfacial engineering strategy by doping PEDOT:PSS with cesium iodide (CsI) to reduce the voltage loss and achieve highly efficient inverted PSCs. SEM, AFM, and XPS measurements suggest that CsI modifies the interface between PEDOT:PSS and perovskite by reacting with PbI2 to form CsPbI3, thus facilitating interfacial contact and charge transport. Moreover, after CsI-modification (CsI-PEDOT:PSS), the hole transport properties of PEDOT:PSS and the hole extraction are enhanced, while the energy levels are more favorable and charge recombination is suppressed. Importantly, compared to pristine PEDOT:PSS that suffers from a large non-radiative recombination loss (0.375 V), CsI-PEDOT:PSS makes the device to realize an impressively low non-radiative voltage loss (only 0.287 V). As a result, inverted PSCs based on CsI-PEDOT:PSS show a small voltage loss, an excellent power conversion efficiency (PCE) of 20.22%, and no hysteresis and achieve a high VOC (1.084 V), while the control device without CsI shows an inferior efficiency of 16.57%. Both the high VOC and PCE are an improvement over literature data on modified PEDOT:PSS-based inverted PSCs.
Persistent Identifierhttp://hdl.handle.net/10722/285847
ISSN
2023 Impact Factor: 10.7
2023 SCImago Journal Rankings: 2.804
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJiang, Kui-
dc.contributor.authorWu, Fei-
dc.contributor.authorZhang, Guangye-
dc.contributor.authorChow, Philip C.Y.-
dc.contributor.authorMa, Chao-
dc.contributor.authorLi, Shufang-
dc.contributor.authorWong, Kam Sing-
dc.contributor.authorZhu, Linna-
dc.contributor.authorYan, He-
dc.date.accessioned2020-08-18T04:56:48Z-
dc.date.available2020-08-18T04:56:48Z-
dc.date.issued2019-
dc.identifier.citationJournal of Materials Chemistry A, 2019, v. 7, n. 38, p. 21662-21667-
dc.identifier.issn2050-7488-
dc.identifier.urihttp://hdl.handle.net/10722/285847-
dc.description.abstract© 2019 The Royal Society of Chemistry. PEDOT:PSS is widely used in perovskite solar cells (PSCs) as the most popular hole transporting layer (HTL). However, p-i-n type inverted planar PSCs based on the PEDOT:PSS HTL typically exhibit up to 200 mV more voltage loss compared to conventional planar PSCs (n-i-p) that generally show open circuit voltages (VOC) of around 1.1 V. In this study, we develop a simple, inexpensive and effective interfacial engineering strategy by doping PEDOT:PSS with cesium iodide (CsI) to reduce the voltage loss and achieve highly efficient inverted PSCs. SEM, AFM, and XPS measurements suggest that CsI modifies the interface between PEDOT:PSS and perovskite by reacting with PbI2 to form CsPbI3, thus facilitating interfacial contact and charge transport. Moreover, after CsI-modification (CsI-PEDOT:PSS), the hole transport properties of PEDOT:PSS and the hole extraction are enhanced, while the energy levels are more favorable and charge recombination is suppressed. Importantly, compared to pristine PEDOT:PSS that suffers from a large non-radiative recombination loss (0.375 V), CsI-PEDOT:PSS makes the device to realize an impressively low non-radiative voltage loss (only 0.287 V). As a result, inverted PSCs based on CsI-PEDOT:PSS show a small voltage loss, an excellent power conversion efficiency (PCE) of 20.22%, and no hysteresis and achieve a high VOC (1.084 V), while the control device without CsI shows an inferior efficiency of 16.57%. Both the high VOC and PCE are an improvement over literature data on modified PEDOT:PSS-based inverted PSCs.-
dc.languageeng-
dc.relation.ispartofJournal of Materials Chemistry A-
dc.titleInverted planar perovskite solar cells based on CsI-doped PEDOT:PSS with efficiency beyond 20% and small energy loss-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/c9ta08995k-
dc.identifier.scopuseid_2-s2.0-85073037298-
dc.identifier.volume7-
dc.identifier.issue38-
dc.identifier.spage21662-
dc.identifier.epage21667-
dc.identifier.eissn2050-7496-
dc.identifier.isiWOS:000490235800005-
dc.identifier.issnl2050-7496-

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