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Article: The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate

TitleThe strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate
Authors
KeywordsA. GaAsSb/AlGaAs strained quantum well
B. molecular beam epitaxy
C. band structure
D. photoluminescence
Issue Date2020
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 2020, v. 309, p. article no. 113837 How to Cite?
AbstractGaAsSb based materials have become the promising system for infrared semiconductor lasers and detectors. In this article, the strain, energy band structures and photoluminescence (PL) of GaAs0.92Sb0·08/Al0.3Ga0.7As strained quantum wells (QWs) grown with molecular beam epitaxy are systematically analyzed both theoretically and experimentally. The theoretical results are derived by Kane's model and k⋅p method, and the optical properties of a high-quality GaAs0.92Sb0·08/Al0.3Ga0.7As strained QWs sample are thoroughly investigated by excitation- and temperature-dependent PL measurements. The theoretical results show the strain has significant influence on the band structure of QWs. In experimental part, it is found that the light-hole exciton emission coexists with the heavy-hole exciton line in the temperature range of 50 K–300 K. However, the emission of localized excitons, which is caused by the nonuniformity of component in the GaAsSb well layer, takes over the light-hole exciton emission at lower temperatures (<50 K).
Persistent Identifierhttp://hdl.handle.net/10722/286303
ISSN
2020 Impact Factor: 1.804
2020 SCImago Journal Rankings: 0.429
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, X-
dc.contributor.authorFang, X-
dc.contributor.authorTang, J-
dc.contributor.authorFang, D-
dc.contributor.authorWang, D-
dc.contributor.authorWang, X-
dc.contributor.authorChen, R-
dc.contributor.authorXu, S-
dc.contributor.authorWei, Z-
dc.date.accessioned2020-08-31T07:02:00Z-
dc.date.available2020-08-31T07:02:00Z-
dc.date.issued2020-
dc.identifier.citationSolid State Communications, 2020, v. 309, p. article no. 113837-
dc.identifier.issn0038-1098-
dc.identifier.urihttp://hdl.handle.net/10722/286303-
dc.description.abstractGaAsSb based materials have become the promising system for infrared semiconductor lasers and detectors. In this article, the strain, energy band structures and photoluminescence (PL) of GaAs0.92Sb0·08/Al0.3Ga0.7As strained quantum wells (QWs) grown with molecular beam epitaxy are systematically analyzed both theoretically and experimentally. The theoretical results are derived by Kane's model and k⋅p method, and the optical properties of a high-quality GaAs0.92Sb0·08/Al0.3Ga0.7As strained QWs sample are thoroughly investigated by excitation- and temperature-dependent PL measurements. The theoretical results show the strain has significant influence on the band structure of QWs. In experimental part, it is found that the light-hole exciton emission coexists with the heavy-hole exciton line in the temperature range of 50 K–300 K. However, the emission of localized excitons, which is caused by the nonuniformity of component in the GaAsSb well layer, takes over the light-hole exciton emission at lower temperatures (<50 K).-
dc.languageeng-
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc-
dc.relation.ispartofSolid State Communications-
dc.subjectA. GaAsSb/AlGaAs strained quantum well-
dc.subjectB. molecular beam epitaxy-
dc.subjectC. band structure-
dc.subjectD. photoluminescence-
dc.titleThe strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate-
dc.typeArticle-
dc.identifier.emailXu, S: sjxu@hku.hk-
dc.identifier.authorityXu, S=rp00821-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.ssc.2020.113837-
dc.identifier.scopuseid_2-s2.0-85078510851-
dc.identifier.hkuros313354-
dc.identifier.volume309-
dc.identifier.spagearticle no. 113837-
dc.identifier.epagearticle no. 113837-
dc.identifier.isiWOS:000519786700012-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0038-1098-

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