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Article: Effectively modulating vertical tunneling transport by mechanically twisting bilayer graphene within the all-metallic architecture

TitleEffectively modulating vertical tunneling transport by mechanically twisting bilayer graphene within the all-metallic architecture
Authors
KeywordsBand structure
Degrees of freedom (mechanics)
Fermi level
Modulation
Quantum chemistry
Issue Date2020
PublisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all
Citation
Nanoscale, 2020, v. 12 n. 6, p. 8793-8800 How to Cite?
AbstractBilayer graphene possesses new degrees of freedom for modulating the electronic band structure, which makes it a tempting solution for overcoming the intrinsic absence of sizeable bandgaps in graphene and designing next-generation devices for post-silicon electronics. By twisting bilayer graphene, interlayer hybridized and twist angle-dependent van Hove singularities in the electronic band structure are generated and expected to facilitate the vertical tunneling transport between bilayer graphene. Herein, based on the ab initio quantum transport simulations, we designed a novel all-metallic vertical quantum transport architecture with the twisted bilayer graphene as the transport channel region and Au electrodes as the source/drain contacts to investigate the twist angle-dependent vertical transport properties. Enhancement in the ION/IOFF ratio by 2 orders of magnitude can be achieved by simply twisting the bilayer graphene. Compared to the traditional gate voltage modulation, which tunes the Fermi energy level alone, the current strategy shifts the Fermi energy level of the channel region away from the Dirac cone, moves the Fermi level and the van Hove singularities towards each other and promotes the vertical quantum transport due to the interlayer electronic hybridization. This dual modulation strategy of this novel mechanical gating device thus provides a potential new solution for designing novel vertical transistors.
Persistent Identifierhttp://hdl.handle.net/10722/286308
ISSN
2023 Impact Factor: 5.8
2023 SCImago Journal Rankings: 1.416
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, X-
dc.contributor.authorWu, T-
dc.contributor.authorZhuang, W-
dc.date.accessioned2020-08-31T07:02:04Z-
dc.date.available2020-08-31T07:02:04Z-
dc.date.issued2020-
dc.identifier.citationNanoscale, 2020, v. 12 n. 6, p. 8793-8800-
dc.identifier.issn2040-3364-
dc.identifier.urihttp://hdl.handle.net/10722/286308-
dc.description.abstractBilayer graphene possesses new degrees of freedom for modulating the electronic band structure, which makes it a tempting solution for overcoming the intrinsic absence of sizeable bandgaps in graphene and designing next-generation devices for post-silicon electronics. By twisting bilayer graphene, interlayer hybridized and twist angle-dependent van Hove singularities in the electronic band structure are generated and expected to facilitate the vertical tunneling transport between bilayer graphene. Herein, based on the ab initio quantum transport simulations, we designed a novel all-metallic vertical quantum transport architecture with the twisted bilayer graphene as the transport channel region and Au electrodes as the source/drain contacts to investigate the twist angle-dependent vertical transport properties. Enhancement in the ION/IOFF ratio by 2 orders of magnitude can be achieved by simply twisting the bilayer graphene. Compared to the traditional gate voltage modulation, which tunes the Fermi energy level alone, the current strategy shifts the Fermi energy level of the channel region away from the Dirac cone, moves the Fermi level and the van Hove singularities towards each other and promotes the vertical quantum transport due to the interlayer electronic hybridization. This dual modulation strategy of this novel mechanical gating device thus provides a potential new solution for designing novel vertical transistors.-
dc.languageeng-
dc.publisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all-
dc.relation.ispartofNanoscale-
dc.subjectBand structure-
dc.subjectDegrees of freedom (mechanics)-
dc.subjectFermi level-
dc.subjectModulation-
dc.subjectQuantum chemistry-
dc.titleEffectively modulating vertical tunneling transport by mechanically twisting bilayer graphene within the all-metallic architecture-
dc.typeArticle-
dc.identifier.emailWu, T: wtmxian@hku.hk-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/D0NR00672F-
dc.identifier.pmid32270154-
dc.identifier.scopuseid_2-s2.0-85084437392-
dc.identifier.hkuros313471-
dc.identifier.volume12-
dc.identifier.issue6-
dc.identifier.spage8793-
dc.identifier.epage8800-
dc.identifier.isiWOS:000547297700018-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2040-3364-

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