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Article: Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding m‑, a- and c‑Plane GaN Substrates
Title | Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding m‑, a- and c‑Plane GaN Substrates |
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Authors | |
Keywords | Phonons Raman scattering Nitrides Energy Energy |
Issue Date | 2020 |
Publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/ |
Citation | The Journal of Physical Chemistry C, 2020, v. 124 n. 33, p. 18203-18208 How to Cite? |
Abstract | Anisotropic optical properties in m-, a-, and c-plane GaN substrates are investigated with photoluminescence and Raman scattering spectroscopic techniques. At room temperature, the Raman light scattering of polar phonon modes, i.e., A1 and E1 modes, exhibits vividly polarization property, while two nonpolar modes (e.g., E2L and E2H) and a defect-mediated mode at ∼418 cm–1 can be observed in all the substrates with three orientations. More interestingly, a silent Raman mode (e.g., B1L) is observed in the Raman spectra of the two nonpolar substrates. At cryogenic temperature, the band-edge emissions and respective LO phonon replicas of the m-plane substrate show a strong polarization dependence on the direction of electric field of excitation light no matter what the recombination mechanism is. Furthermore, the polarization is found to be strongly temperature-dependent. These experimental findings are well consistent with the predictions by Hopfield’s model (e.g., J. Phys. Chem. Solids 1959, 10, 110–119). |
Persistent Identifier | http://hdl.handle.net/10722/287164 |
ISSN | 2023 Impact Factor: 3.3 2023 SCImago Journal Rankings: 0.957 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | WANG, M | - |
dc.contributor.author | Xu, K | - |
dc.contributor.author | Xu, S | - |
dc.date.accessioned | 2020-09-22T02:56:45Z | - |
dc.date.available | 2020-09-22T02:56:45Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | The Journal of Physical Chemistry C, 2020, v. 124 n. 33, p. 18203-18208 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10722/287164 | - |
dc.description.abstract | Anisotropic optical properties in m-, a-, and c-plane GaN substrates are investigated with photoluminescence and Raman scattering spectroscopic techniques. At room temperature, the Raman light scattering of polar phonon modes, i.e., A1 and E1 modes, exhibits vividly polarization property, while two nonpolar modes (e.g., E2L and E2H) and a defect-mediated mode at ∼418 cm–1 can be observed in all the substrates with three orientations. More interestingly, a silent Raman mode (e.g., B1L) is observed in the Raman spectra of the two nonpolar substrates. At cryogenic temperature, the band-edge emissions and respective LO phonon replicas of the m-plane substrate show a strong polarization dependence on the direction of electric field of excitation light no matter what the recombination mechanism is. Furthermore, the polarization is found to be strongly temperature-dependent. These experimental findings are well consistent with the predictions by Hopfield’s model (e.g., J. Phys. Chem. Solids 1959, 10, 110–119). | - |
dc.language | eng | - |
dc.publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/ | - |
dc.relation.ispartof | The Journal of Physical Chemistry C | - |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html]. | - |
dc.subject | Phonons | - |
dc.subject | Raman scattering | - |
dc.subject | Nitrides | - |
dc.subject | Energy | - |
dc.subject | Energy | - |
dc.title | Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding m‑, a- and c‑Plane GaN Substrates | - |
dc.type | Article | - |
dc.identifier.email | Xu, S: sjxu@hku.hk | - |
dc.identifier.authority | Xu, S=rp00821 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acs.jpcc.0c04959 | - |
dc.identifier.scopus | eid_2-s2.0-85095968454 | - |
dc.identifier.hkuros | 314512 | - |
dc.identifier.volume | 124 | - |
dc.identifier.issue | 33 | - |
dc.identifier.spage | 18203 | - |
dc.identifier.epage | 18208 | - |
dc.identifier.isi | WOS:000563746200038 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 1932-7447 | - |