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Article: Controlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition
Title | Controlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition |
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Authors | |
Issue Date | 2020 |
Citation | University of Hong Kong, 2020, p. 1-132 (Forthcoming) How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/287289 |
DC Field | Value | Language |
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dc.contributor.author | RASHID, R | - |
dc.date.accessioned | 2020-09-22T02:58:44Z | - |
dc.date.available | 2020-09-22T02:58:44Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | University of Hong Kong, 2020, p. 1-132 (Forthcoming) | - |
dc.identifier.uri | http://hdl.handle.net/10722/287289 | - |
dc.language | eng | - |
dc.relation.ispartof | University of Hong Kong | - |
dc.title | Controlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.identifier.hkuros | 314228 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 132 | - |
dc.publisher.place | Hong Kong | - |