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Article: Comparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques

TitleComparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques
Authors
Keywordszinc oxide
RF magnetron sputtering
pulsed laser deposition
photoluminescence
hetero-junction
Issue Date2020
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.com/journal/11453
Citation
Semiconductors, 2020, v. 54 n. 9, p. 999-1010 How to Cite?
AbstractZnO thin films were formed on c-plane sapphire and p-GaN substrates by pulsed laser deposition (PLD) and radio frequency (RF) magnetron sputtering techniques. XRD analysis including omega scan depicted the formation of highly textured wurtzite ZnO with c-axis. The texture was primarily introduced by the substrate effects as the planes lying at oblique angles also exhibited six-fold symmetry during phi scan. Atomic force microscopy exhibited the surface roughness of 4.33 and 12.99 nm for PLD and sputtered ZnO films, respectively. In photoluminescence (PL) measurements, a strong UV emission was observed at 3.30 eV for both ZnO films. However, deep-level emission was observed at around 2.61 eV in PLD film, but it had a wide range from 2.61 to 2.29 eV in case of sputter-deposited film. From the transmission spectra, the optical band gap values were found to be 3.29 and 3.28 eV for PLD and sputtered ZnO films, respectively. Hall measurement revealed the resistivity values of 0.0792 and 0.4832 Ω cm and carrier concentrations of 2.28 × 1018 and 1.73 × 1018 cm–3 for respective PLD and sputtered films. I(V) current–voltage curves clearly demonstrated the n-ZnO|p-GaN hetero-junction with turn-on voltage of 3.8 and 5.2 V for PLD and sputtered samples, respectively.
Persistent Identifierhttp://hdl.handle.net/10722/288146
ISSN
2023 Impact Factor: 0.6
2023 SCImago Journal Rankings: 0.173
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKhan, HN-
dc.contributor.authorMehmood, M-
dc.contributor.authorLing, FCC-
dc.contributor.authorKhan, AF-
dc.contributor.authorAli, SM-
dc.date.accessioned2020-10-05T12:08:33Z-
dc.date.available2020-10-05T12:08:33Z-
dc.date.issued2020-
dc.identifier.citationSemiconductors, 2020, v. 54 n. 9, p. 999-1010-
dc.identifier.issn1063-7826-
dc.identifier.urihttp://hdl.handle.net/10722/288146-
dc.description.abstractZnO thin films were formed on c-plane sapphire and p-GaN substrates by pulsed laser deposition (PLD) and radio frequency (RF) magnetron sputtering techniques. XRD analysis including omega scan depicted the formation of highly textured wurtzite ZnO with c-axis. The texture was primarily introduced by the substrate effects as the planes lying at oblique angles also exhibited six-fold symmetry during phi scan. Atomic force microscopy exhibited the surface roughness of 4.33 and 12.99 nm for PLD and sputtered ZnO films, respectively. In photoluminescence (PL) measurements, a strong UV emission was observed at 3.30 eV for both ZnO films. However, deep-level emission was observed at around 2.61 eV in PLD film, but it had a wide range from 2.61 to 2.29 eV in case of sputter-deposited film. From the transmission spectra, the optical band gap values were found to be 3.29 and 3.28 eV for PLD and sputtered ZnO films, respectively. Hall measurement revealed the resistivity values of 0.0792 and 0.4832 Ω cm and carrier concentrations of 2.28 × 1018 and 1.73 × 1018 cm–3 for respective PLD and sputtered films. I(V) current–voltage curves clearly demonstrated the n-ZnO|p-GaN hetero-junction with turn-on voltage of 3.8 and 5.2 V for PLD and sputtered samples, respectively.-
dc.languageeng-
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.com/journal/11453-
dc.relation.ispartofSemiconductors-
dc.rightsThis is a post-peer-review, pre-copyedit version of an article published in [insert journal title]. The final authenticated version is available online at: https://doi.org/[insert DOI]-
dc.subjectzinc oxide-
dc.subjectRF magnetron sputtering-
dc.subjectpulsed laser deposition-
dc.subjectphotoluminescence-
dc.subjecthetero-junction-
dc.titleComparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques-
dc.typeArticle-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1134/S1063782620090201-
dc.identifier.scopuseid_2-s2.0-85090333952-
dc.identifier.hkuros314986-
dc.identifier.volume54-
dc.identifier.issue9-
dc.identifier.spage999-
dc.identifier.epage1010-
dc.identifier.isiWOS:000567018500002-
dc.publisher.placeRussian Federation-
dc.identifier.issnl1063-7826-

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