File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition

TitleShape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition
Authors
KeywordsIndium Triselenide
Layered Semiconductors
Ferroelectric
Issue Date2020
PublisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all
Citation
Nanoscale, 2020, v. 12 n. 39, p. 20189-20201 How to Cite?
AbstractFor potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. The optical microscopy study revealed that the flake changed from a circular shape to a sharp face triangle as the Ar flow rate and growth time increased. Raman spectroscopy and high-resolution scanning transmission electron microscopy (HR-STEM) studies revealed that the flakes were of α and β phases, each of which has a hexagonal crystal structure. Strong second harmonic generation (SHG) was observed from α-In2Se3, demonstrating its non-centrosymmetric structure. The piezo-force microscopic (PFM) study showed the presence of out of plane (OOP) ferroelectricity with no in plane (IP) ferroelectricity in CVD grown α-In2Se3 indicating its vertically confined piezoresponse, which was tuned by the applied electric bias and the flake thickness. The present result of shape-controlled growth of In2Se3 with OOP ferroelectricity would open new pathways in the field of 2D ferroelectric switching devices.
Persistent Identifierhttp://hdl.handle.net/10722/290639
ISSN
2019 Impact Factor: 6.895
2015 SCImago Journal Rankings: 2.969
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorRASHID, R-
dc.contributor.authorLing, FCC-
dc.contributor.authorWang, SP-
dc.contributor.authorXIAO, K-
dc.contributor.authorCui, X-
dc.contributor.authorChan, TH-
dc.contributor.authorOng, HC-
dc.contributor.authorAZEEM, W-
dc.contributor.authorYounas, M-
dc.date.accessioned2020-11-02T05:45:03Z-
dc.date.available2020-11-02T05:45:03Z-
dc.date.issued2020-
dc.identifier.citationNanoscale, 2020, v. 12 n. 39, p. 20189-20201-
dc.identifier.issn2040-3364-
dc.identifier.urihttp://hdl.handle.net/10722/290639-
dc.description.abstractFor potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. The optical microscopy study revealed that the flake changed from a circular shape to a sharp face triangle as the Ar flow rate and growth time increased. Raman spectroscopy and high-resolution scanning transmission electron microscopy (HR-STEM) studies revealed that the flakes were of α and β phases, each of which has a hexagonal crystal structure. Strong second harmonic generation (SHG) was observed from α-In2Se3, demonstrating its non-centrosymmetric structure. The piezo-force microscopic (PFM) study showed the presence of out of plane (OOP) ferroelectricity with no in plane (IP) ferroelectricity in CVD grown α-In2Se3 indicating its vertically confined piezoresponse, which was tuned by the applied electric bias and the flake thickness. The present result of shape-controlled growth of In2Se3 with OOP ferroelectricity would open new pathways in the field of 2D ferroelectric switching devices.-
dc.languageeng-
dc.publisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all-
dc.relation.ispartofNanoscale-
dc.subjectIndium Triselenide-
dc.subjectLayered Semiconductors-
dc.subjectFerroelectric-
dc.titleShape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition-
dc.typeArticle-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.emailCui, X: xdcui@hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.authorityCui, X=rp00689-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/C9NR10207H-
dc.identifier.pmid32677627-
dc.identifier.scopuseid_2-s2.0-85093538393-
dc.identifier.hkuros318185-
dc.identifier.volume12-
dc.identifier.issue39-
dc.identifier.spage20189-
dc.identifier.epage20201-
dc.identifier.isiWOS:000579877200049-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2040-3364-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats