File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1007/s11426-020-9857-1
- Scopus: eid_2-s2.0-85092619306
- WOS: WOS:000578954100001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Engineering of dendritic dopant-free hole transport molecules: enabling ultrahigh fill factor in perovskite solar cells with optimized dendron construction
Title | Engineering of dendritic dopant-free hole transport molecules: enabling ultrahigh fill factor in perovskite solar cells with optimized dendron construction |
---|---|
Authors | |
Keywords | dendritic molecules hole-transporting materials dopant-free ultrahigh fill factor perovskite solar cells |
Issue Date | 2021 |
Publisher | Springer Verlag, co-published with Science China Press. The Journal's web site is located at https://link.springer.com/journal/11426 |
Citation | Science China Chemistry, 2021, v. 64, p. 41-51 How to Cite? |
Abstract | Developing dopant-free hole-transporting materials (HTMs) for high-performance perovskite solar cells (PVSCs) has been a very active research topic in recent years since HTMs play a critical role in optimizing interfacial charge carrier kinetics and in turn determining device performance. Here, a novel dendritic engineering strategy is first utilized to design HTMs with a D-A type molecular framework, and diphenylamine and/or carbazole is selected as the building block for constructing dendrons. All HTMs show good thermal stability and excellent film morphology, and the key optoelectronic properties could be fine-tuned by varying the dendron structure. Among them, MPA-Cz-BTI and MCz-Cz-BTI exhibit an improved interfacial contact with the perovskite active layer, and non-radiative recombination loss and charge transport loss can be effectively suppressed. Consequently, high power conversion efficiencies (PCEs) of 20.8% and 21.35% are achieved for MPA-Cz-BTI and MCz-Cz-BTI based devices, respectively, accompanied by excellent long-term storage stability. More encouragingly, ultrahigh fill factors of 85.2% and 83.5% are recorded for both devices, which are among the highest values reported to date. This work demonstrates the great potential of dendritic materials as a new type of dopant-free HTMs for high-performance PVSCs with excellent FF. |
Persistent Identifier | http://hdl.handle.net/10722/293410 |
ISSN | 2023 Impact Factor: 10.4 2023 SCImago Journal Rankings: 2.316 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, W | - |
dc.contributor.author | Wang, Y | - |
dc.contributor.author | Liu, B | - |
dc.contributor.author | Gao, Y | - |
dc.contributor.author | Wu, Z | - |
dc.contributor.author | Shi, Y | - |
dc.contributor.author | Tang, Y | - |
dc.contributor.author | Yang, K | - |
dc.contributor.author | Zhang, Y | - |
dc.contributor.author | Sun, W | - |
dc.contributor.author | Feng, X | - |
dc.contributor.author | Laquai, F | - |
dc.contributor.author | Woo, HY | - |
dc.contributor.author | Djurisic, A | - |
dc.contributor.author | Guo, X | - |
dc.contributor.author | He, Z | - |
dc.date.accessioned | 2020-11-23T08:16:21Z | - |
dc.date.available | 2020-11-23T08:16:21Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Science China Chemistry, 2021, v. 64, p. 41-51 | - |
dc.identifier.issn | 1674-7291 | - |
dc.identifier.uri | http://hdl.handle.net/10722/293410 | - |
dc.description.abstract | Developing dopant-free hole-transporting materials (HTMs) for high-performance perovskite solar cells (PVSCs) has been a very active research topic in recent years since HTMs play a critical role in optimizing interfacial charge carrier kinetics and in turn determining device performance. Here, a novel dendritic engineering strategy is first utilized to design HTMs with a D-A type molecular framework, and diphenylamine and/or carbazole is selected as the building block for constructing dendrons. All HTMs show good thermal stability and excellent film morphology, and the key optoelectronic properties could be fine-tuned by varying the dendron structure. Among them, MPA-Cz-BTI and MCz-Cz-BTI exhibit an improved interfacial contact with the perovskite active layer, and non-radiative recombination loss and charge transport loss can be effectively suppressed. Consequently, high power conversion efficiencies (PCEs) of 20.8% and 21.35% are achieved for MPA-Cz-BTI and MCz-Cz-BTI based devices, respectively, accompanied by excellent long-term storage stability. More encouragingly, ultrahigh fill factors of 85.2% and 83.5% are recorded for both devices, which are among the highest values reported to date. This work demonstrates the great potential of dendritic materials as a new type of dopant-free HTMs for high-performance PVSCs with excellent FF. | - |
dc.language | eng | - |
dc.publisher | Springer Verlag, co-published with Science China Press. The Journal's web site is located at https://link.springer.com/journal/11426 | - |
dc.relation.ispartof | Science China Chemistry | - |
dc.rights | This is a post-peer-review, pre-copyedit version of an article published in [insert journal title]. The final authenticated version is available online at: https://doi.org/[insert DOI] | - |
dc.subject | dendritic molecules | - |
dc.subject | hole-transporting materials | - |
dc.subject | dopant-free | - |
dc.subject | ultrahigh fill factor | - |
dc.subject | perovskite solar cells | - |
dc.title | Engineering of dendritic dopant-free hole transport molecules: enabling ultrahigh fill factor in perovskite solar cells with optimized dendron construction | - |
dc.type | Article | - |
dc.identifier.email | Chen, W: chenw20@hku.hk | - |
dc.identifier.email | Djurisic, A: dalek@hku.hk | - |
dc.identifier.authority | Djurisic, A=rp00690 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1007/s11426-020-9857-1 | - |
dc.identifier.scopus | eid_2-s2.0-85092619306 | - |
dc.identifier.hkuros | 318864 | - |
dc.identifier.volume | 64 | - |
dc.identifier.spage | 41 | - |
dc.identifier.epage | 51 | - |
dc.identifier.isi | WOS:000578954100001 | - |
dc.publisher.place | Germany | - |