File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/JQE.2002.800987
- Scopus: eid_2-s2.0-0036684068
- WOS: WOS:000177221700006
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials
Title | Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials |
---|---|
Authors | |
Keywords | Selective growth Raman Coalescence Nanoheteroepitaxy MOCVD GaN |
Issue Date | 2002 |
Citation | IEEE Journal of Quantum Electronics, 2002, v. 38, n. 8, p. 1017-1028 How to Cite? |
Abstract | We describe an ongoing study of nanoheteroepitaxy (NHE), the use of nanoscale growth-initiation areas for the integration of highly mismatched semiconductor materials. The concept and theory of NHE is briefly described and is followed by a discussion of the design and fabrication by interferometric lithography of practical sample structures that satisfy the requirements of NHE. Results of NHE growth of GaAs-on-Si and GaN-on-Si are described, following the NHE process from nucleation through to coalescence. Micro-Raman measurements indicate that the strain in partially coalesced NHE GaN-on-Si films is <0.1 GPa. |
Persistent Identifier | http://hdl.handle.net/10722/294987 |
ISSN | 2023 Impact Factor: 2.2 2023 SCImago Journal Rankings: 0.563 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hersee, Stephen D. | - |
dc.contributor.author | Zubia, David | - |
dc.contributor.author | Sun, Xinyu | - |
dc.contributor.author | Bommena, R. | - |
dc.contributor.author | Fairchild, Mike | - |
dc.contributor.author | Zhang, S. | - |
dc.contributor.author | Burckel, David | - |
dc.contributor.author | Frauenglass, A. | - |
dc.contributor.author | Brueck, S. R.J. | - |
dc.date.accessioned | 2021-01-05T04:58:49Z | - |
dc.date.available | 2021-01-05T04:58:49Z | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | IEEE Journal of Quantum Electronics, 2002, v. 38, n. 8, p. 1017-1028 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | http://hdl.handle.net/10722/294987 | - |
dc.description.abstract | We describe an ongoing study of nanoheteroepitaxy (NHE), the use of nanoscale growth-initiation areas for the integration of highly mismatched semiconductor materials. The concept and theory of NHE is briefly described and is followed by a discussion of the design and fabrication by interferometric lithography of practical sample structures that satisfy the requirements of NHE. Results of NHE growth of GaAs-on-Si and GaN-on-Si are described, following the NHE process from nucleation through to coalescence. Micro-Raman measurements indicate that the strain in partially coalesced NHE GaN-on-Si films is <0.1 GPa. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Journal of Quantum Electronics | - |
dc.subject | Selective growth | - |
dc.subject | Raman | - |
dc.subject | Coalescence | - |
dc.subject | Nanoheteroepitaxy | - |
dc.subject | MOCVD | - |
dc.subject | GaN | - |
dc.title | Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/JQE.2002.800987 | - |
dc.identifier.scopus | eid_2-s2.0-0036684068 | - |
dc.identifier.volume | 38 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 1017 | - |
dc.identifier.epage | 1028 | - |
dc.identifier.isi | WOS:000177221700006 | - |
dc.identifier.issnl | 0018-9197 | - |