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Article: Sub-Poissonian shot noise of a high internal gain injection photon detector

TitleSub-Poissonian shot noise of a high internal gain injection photon detector
Authors
Memis, Omer GokalpKatsnelson, AlexKong, Soon CheolMohseni, HoomanYan, MinjunZhang, ShuangHossain, TimJin, NiuAdesida, Ilesanmi
Issue Date2008
Citation
Optics Express, 2008, v. 16, n. 17, p. 12701-12706 How to Cite?
DOI: http://dx.doi.org/10.1364/OE.16.012701
AbstractThe noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations. © 2008 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/295004
ISI Accession Number ID
WOS:000259268700030

 

DC FieldValueLanguage
dc.contributor.authorMemis, Omer Gokalp-
dc.contributor.authorKatsnelson, Alex-
dc.contributor.authorKong, Soon Cheol-
dc.contributor.authorMohseni, Hooman-
dc.contributor.authorYan, Minjun-
dc.contributor.authorZhang, Shuang-
dc.contributor.authorHossain, Tim-
dc.contributor.authorJin, Niu-
dc.contributor.authorAdesida, Ilesanmi-
dc.date.accessioned2021-01-05T04:58:51Z-
dc.date.available2021-01-05T04:58:51Z-
dc.date.issued2008-
dc.identifier.citationOptics Express, 2008, v. 16, n. 17, p. 12701-12706-
dc.identifier.urihttp://hdl.handle.net/10722/295004-
dc.description.abstractThe noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations. © 2008 Optical Society of America.-
dc.languageeng-
dc.relation.ispartofOptics Express-
dc.titleSub-Poissonian shot noise of a high internal gain injection photon detector-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1364/OE.16.012701-
dc.identifier.pmid18711508-
dc.identifier.scopuseid_2-s2.0-50049131840-
dc.identifier.volume16-
dc.identifier.issue17-
dc.identifier.spage12701-
dc.identifier.epage12706-
dc.identifier.eissn1094-4087-
dc.identifier.isiWOS:000259268700030-
dc.identifier.issnl1094-4087-

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