File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A photon detector with very high gain at low bias and at room temperature

TitleA photon detector with very high gain at low bias and at room temperature
Authors
Issue Date2007
Citation
Applied Physics Letters, 2007, v. 91, n. 17, article no. 171112 How to Cite?
AbstractWe report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/295063
ISSN
2020 Impact Factor: 3.791
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMemis, Omer Gokalp-
dc.contributor.authorKatsnelson, Alex-
dc.contributor.authorKong, Soon Cheol-
dc.contributor.authorMohseni, Hooman-
dc.contributor.authorYan, Minjun-
dc.contributor.authorZhang, Shuang-
dc.contributor.authorHossain, Tim-
dc.contributor.authorJin, Niu-
dc.contributor.authorAdesida, Ilesanmi-
dc.date.accessioned2021-01-05T04:58:59Z-
dc.date.available2021-01-05T04:58:59Z-
dc.date.issued2007-
dc.identifier.citationApplied Physics Letters, 2007, v. 91, n. 17, article no. 171112-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/295063-
dc.description.abstractWe report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation. © 2007 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleA photon detector with very high gain at low bias and at room temperature-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2802043-
dc.identifier.scopuseid_2-s2.0-35548992771-
dc.identifier.volume91-
dc.identifier.issue17-
dc.identifier.spagearticle no. 171112-
dc.identifier.epagearticle no. 171112-
dc.identifier.isiWOS:000250468200012-
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats