A photon detector with very high gain at low bias and at room temperature

Abstract

We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation. © 2007 American Institute of Physics.