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Article: Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy

TitleStudy of charge diffusion at the carbon nanotube-SiO<inf>2</inf> interface by electrostatic force microscopy
Authors
Issue Date2009
Citation
Journal of Physical Chemistry C, 2009, v. 113, n. 35, p. 15476-15479 How to Cite?
AbstractHysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. © 2009 American Chemical Society. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/297970
ISSN
2020 Impact Factor: 4.126
2020 SCImago Journal Rankings: 1.401

 

DC FieldValueLanguage
dc.contributor.authorHe, Yingran-
dc.contributor.authorOng, Hock Guan-
dc.contributor.authorZhao, Yang-
dc.contributor.authorHe, Sailing-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWang, Junling-
dc.date.accessioned2021-04-08T03:07:22Z-
dc.date.available2021-04-08T03:07:22Z-
dc.date.issued2009-
dc.identifier.citationJournal of Physical Chemistry C, 2009, v. 113, n. 35, p. 15476-15479-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/297970-
dc.description.abstractHysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. © 2009 American Chemical Society. 2 2-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleStudy of charge diffusion at the carbon nanotube-SiO<inf>2</inf> interface by electrostatic force microscopy-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp905779f-
dc.identifier.scopuseid_2-s2.0-70349151719-
dc.identifier.volume113-
dc.identifier.issue35-
dc.identifier.spage15476-
dc.identifier.epage15479-
dc.identifier.eissn1932-7455-
dc.identifier.issnl1932-7447-

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