Determination of band alignment in the single-layer MoS<inf>2</inf>/WSe<inf>2</inf> heterojunction

Abstract

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS and WSe with a valence band offset value of 0.83eV and a conduction band offset of 0.76eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe and MoS are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94eV is obtained from density functional theory, consistent with the experimental determination. 2 2 2 2