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Article: Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

TitleLedge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
Authors
Issue Date2020
Citation
Nature Materials, 2020, v. 19, n. 12, p. 1300-1306 How to Cite?
AbstractTwo-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS nanoribbons on β-gallium (iii) oxide (β-Ga O ) (100) substrates. LDE MoS nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS -nanoribbon-based field-effect transistors exhibit high on/off ratios of 10 and an averaged room temperature electron mobility of 65 cm V s . The MoS nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga O can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe nanoribbons and lateral heterostructures made of p-WSe and n-MoS nanoribbons for futuristic electronics applications. 2 2 3 2 2 2 2 3 2 2 2 8 2 −1 −1
Persistent Identifierhttp://hdl.handle.net/10722/297976
ISSN
2023 Impact Factor: 37.2
2023 SCImago Journal Rankings: 14.231
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorAljarb, Areej-
dc.contributor.authorFu, Jui Han-
dc.contributor.authorHsu, Chih Chan-
dc.contributor.authorChuu, Chih Piao-
dc.contributor.authorWan, Yi-
dc.contributor.authorHakami, Mariam-
dc.contributor.authorNaphade, Dipti R.-
dc.contributor.authorYengel, Emre-
dc.contributor.authorLee, Chien Ju-
dc.contributor.authorBrems, Steven-
dc.contributor.authorChen, Tse An-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorBae, Sang Hoon-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorCao, Zhen-
dc.contributor.authorAlbaridy, Rehab-
dc.contributor.authorLopatin, Sergei-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorAnthopoulos, Thomas D.-
dc.contributor.authorKim, Jeehwan-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorTung, Vincent-
dc.date.accessioned2021-04-08T03:07:23Z-
dc.date.available2021-04-08T03:07:23Z-
dc.date.issued2020-
dc.identifier.citationNature Materials, 2020, v. 19, n. 12, p. 1300-1306-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/297976-
dc.description.abstractTwo-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS nanoribbons on β-gallium (iii) oxide (β-Ga O ) (100) substrates. LDE MoS nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS -nanoribbon-based field-effect transistors exhibit high on/off ratios of 10 and an averaged room temperature electron mobility of 65 cm V s . The MoS nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga O can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe nanoribbons and lateral heterostructures made of p-WSe and n-MoS nanoribbons for futuristic electronics applications. 2 2 3 2 2 2 2 3 2 2 2 8 2 −1 −1-
dc.languageeng-
dc.relation.ispartofNature Materials-
dc.titleLedge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41563-020-0795-4-
dc.identifier.pmid32895505-
dc.identifier.scopuseid_2-s2.0-85090308093-
dc.identifier.volume19-
dc.identifier.issue12-
dc.identifier.spage1300-
dc.identifier.epage1306-
dc.identifier.eissn1476-4660-
dc.identifier.isiWOS:000566854700001-
dc.identifier.issnl1476-1122-

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