Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

Abstract

Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS nanoribbons on β-gallium (iii) oxide (β-Ga O ) (100) substrates. LDE MoS nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS -nanoribbon-based field-effect transistors exhibit high on/off ratios of 10 and an averaged room temperature electron mobility of 65 cm V s . The MoS nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga O can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe nanoribbons and lateral heterostructures made of p-WSe and n-MoS nanoribbons for futuristic electronics applications. 2 2 3 2 2 2 2 3 2 2 2 8 2 −1 −1