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Conference Paper: Impact of schottky barrier on the performance of two-dimensional material transistors

TitleImpact of schottky barrier on the performance of two-dimensional material transistors
Authors
Su, Sheng KaiCai, JinChen, EdwardLi, Lain JongPhilip Wong, H. S.
KeywordsSub-threshold swig
Future CMOS technology
Schottky contact
2D van der Waals materials
WS2
Issue Date2020
Citation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2020, v. 2020-September, p. 285-287 How to Cite?
DOI: http://dx.doi.org/10.23919/SISPAD49475.2020.9241670
AbstractDouble-gated monolayer two-dimensional (2D) material transistor is expected to offer ideal (60 mV/dec) subthreshold swing (SS) for gate lengths well below 10 nm. However, the ideal 2D transistor assumes Ohmic contacts whereas a realistic metal/2D Schottky contact can degrade SS. Transport simulations including scattering is necessary to correctly describe carrier thermalization and predict the SS degradation. Scaled 2D transistors with a Schottky barrier height (SBH) smaller than 100 meV and doping concentration in the extension region larger than 2x1013 cm-2 are required to achieve high performance.
Persistent Identifierhttp://hdl.handle.net/10722/297991
ISI Accession Number ID
WOS:000636981000072

 

DC FieldValueLanguage
dc.contributor.authorSu, Sheng Kai-
dc.contributor.authorCai, Jin-
dc.contributor.authorChen, Edward-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorPhilip Wong, H. S.-
dc.date.accessioned2021-04-08T03:07:25Z-
dc.date.available2021-04-08T03:07:25Z-
dc.date.issued2020-
dc.identifier.citationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2020, v. 2020-September, p. 285-287-
dc.identifier.urihttp://hdl.handle.net/10722/297991-
dc.description.abstractDouble-gated monolayer two-dimensional (2D) material transistor is expected to offer ideal (60 mV/dec) subthreshold swing (SS) for gate lengths well below 10 nm. However, the ideal 2D transistor assumes Ohmic contacts whereas a realistic metal/2D Schottky contact can degrade SS. Transport simulations including scattering is necessary to correctly describe carrier thermalization and predict the SS degradation. Scaled 2D transistors with a Schottky barrier height (SBH) smaller than 100 meV and doping concentration in the extension region larger than 2x1013 cm-2 are required to achieve high performance.-
dc.languageeng-
dc.relation.ispartofInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD-
dc.subjectSub-threshold swig-
dc.subjectFuture CMOS technology-
dc.subjectSchottky contact-
dc.subject2D van der Waals materials-
dc.subjectWS2-
dc.titleImpact of schottky barrier on the performance of two-dimensional material transistors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.23919/SISPAD49475.2020.9241670-
dc.identifier.scopuseid_2-s2.0-85096243485-
dc.identifier.volume2020-September-
dc.identifier.spage285-
dc.identifier.epage287-
dc.identifier.isiWOS:000636981000072-

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