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Conference Paper: Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

TitleLarge-scale 2D electronics based on single-layer MoS<inf>2</inf> grown by chemical vapor deposition
Authors
Issue Date2012
Citation
2012 International Electron Devices Meeting (IEDM), San Francisco, CA, 10-13 December 2012. In International Electron Devices Meeting (IEDM), 2012 How to Cite?
Abstract2D nanoelectronics based on single-layer MoS offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. © 2012 IEEE. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298028
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, H.-
dc.contributor.authorYu, L.-
dc.contributor.authorLee, Y. H.-
dc.contributor.authorFang, W.-
dc.contributor.authorHsu, A.-
dc.contributor.authorHerring, P.-
dc.contributor.authorChin, M.-
dc.contributor.authorDubey, M.-
dc.contributor.authorLi, L. J.-
dc.contributor.authorKong, J.-
dc.contributor.authorPalacios, T.-
dc.date.accessioned2021-04-08T03:07:30Z-
dc.date.available2021-04-08T03:07:30Z-
dc.date.issued2012-
dc.identifier.citation2012 International Electron Devices Meeting (IEDM), San Francisco, CA, 10-13 December 2012. In International Electron Devices Meeting (IEDM), 2012-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298028-
dc.description.abstract2D nanoelectronics based on single-layer MoS offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. © 2012 IEEE. 2 2-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleLarge-scale 2D electronics based on single-layer MoS<inf>2</inf> grown by chemical vapor deposition-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2012.6478980-
dc.identifier.scopuseid_2-s2.0-84876159781-
dc.identifier.isiWOS:000320615600023-
dc.identifier.issnl0163-1918-

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