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- Publisher Website: 10.1109/IEDM.2012.6478980
- Scopus: eid_2-s2.0-84876159781
- WOS: WOS:000320615600023
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Conference Paper: Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition
Title | Large-scale 2D electronics based on single-layer MoS<inf>2</inf> grown by chemical vapor deposition |
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Authors | |
Issue Date | 2012 |
Citation | 2012 International Electron Devices Meeting (IEDM), San Francisco, CA, 10-13 December 2012. In International Electron Devices Meeting (IEDM), 2012 How to Cite? |
Abstract | 2D nanoelectronics based on single-layer MoS offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. © 2012 IEEE. 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298028 |
ISSN | 2023 SCImago Journal Rankings: 1.047 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, H. | - |
dc.contributor.author | Yu, L. | - |
dc.contributor.author | Lee, Y. H. | - |
dc.contributor.author | Fang, W. | - |
dc.contributor.author | Hsu, A. | - |
dc.contributor.author | Herring, P. | - |
dc.contributor.author | Chin, M. | - |
dc.contributor.author | Dubey, M. | - |
dc.contributor.author | Li, L. J. | - |
dc.contributor.author | Kong, J. | - |
dc.contributor.author | Palacios, T. | - |
dc.date.accessioned | 2021-04-08T03:07:30Z | - |
dc.date.available | 2021-04-08T03:07:30Z | - |
dc.date.issued | 2012 | - |
dc.identifier.citation | 2012 International Electron Devices Meeting (IEDM), San Francisco, CA, 10-13 December 2012. In International Electron Devices Meeting (IEDM), 2012 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298028 | - |
dc.description.abstract | 2D nanoelectronics based on single-layer MoS offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. © 2012 IEEE. 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | International Electron Devices Meeting (IEDM) | - |
dc.title | Large-scale 2D electronics based on single-layer MoS<inf>2</inf> grown by chemical vapor deposition | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IEDM.2012.6478980 | - |
dc.identifier.scopus | eid_2-s2.0-84876159781 | - |
dc.identifier.isi | WOS:000320615600023 | - |
dc.identifier.issnl | 0163-1918 | - |