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- Publisher Website: 10.1016/j.carbon.2013.04.099
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Article: Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam
Title | Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam |
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Authors | |
Issue Date | 2013 |
Citation | Carbon, 2013, v. 61, p. 229-235 How to Cite? |
Abstract | Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low I /I of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm V s ) at room temperature. © 2013 Elsevier Ltd. All rights reserved. D G 2 -1 -1 |
Persistent Identifier | http://hdl.handle.net/10722/298039 |
ISSN | 2021 Impact Factor: 11.307 2020 SCImago Journal Rankings: 2.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Huang, Chi Hsien | - |
dc.contributor.author | Su, Ching Yuan | - |
dc.contributor.author | Okada, Takeru | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Ho, Kuan I. | - |
dc.contributor.author | Li, Pei Wen | - |
dc.contributor.author | Chen, Inn Hao | - |
dc.contributor.author | Chou, Chien | - |
dc.contributor.author | Lai, Chao Sung | - |
dc.contributor.author | Samukawa, Seiji | - |
dc.date.accessioned | 2021-04-08T03:07:31Z | - |
dc.date.available | 2021-04-08T03:07:31Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Carbon, 2013, v. 61, p. 229-235 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298039 | - |
dc.description.abstract | Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low I /I of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm V s ) at room temperature. © 2013 Elsevier Ltd. All rights reserved. D G 2 -1 -1 | - |
dc.language | eng | - |
dc.relation.ispartof | Carbon | - |
dc.title | Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.carbon.2013.04.099 | - |
dc.identifier.scopus | eid_2-s2.0-84879684685 | - |
dc.identifier.volume | 61 | - |
dc.identifier.spage | 229 | - |
dc.identifier.epage | 235 | - |
dc.identifier.isi | WOS:000322208700023 | - |
dc.identifier.issnl | 0008-6223 | - |