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- Publisher Website: 10.1039/c3ra41744a
- Scopus: eid_2-s2.0-84881539624
- WOS: WOS:000322068400022
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Article: High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation
Title | High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation |
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Authors | |
Issue Date | 2013 |
Citation | RSC Advances, 2013, v. 3, n. 32, p. 13193-13202 How to Cite? |
Abstract | Low-cost and large-area electronic applications require the deposition of active materials in simple and inexpensive techniques at room temperature; properties usually associated with polymer films. In this study, we demonstrate a simple, low-cost and environmentally friendly method for the high-yield production of two dimensional nanosheets of semiconducting transition metal disulfides, integrated with the route towards the solution-processed deposition of MoS and WS thin films. The resulting materials with high purity and no contamination or distortion in their structural and electronic properties were confirmed with different microscopic and macroscopic methods. As a proof of concept, we utilize these layered transition metal disulphide films as electron extraction layers in an inverted structure organic solar cell, prepared at relatively low annealing temperatures (≤150°C). A promising power conversion efficiency with high stability is achieved, which makes these proposed buffer layers quite attractive for next-generation flexible devices requiring high conductivity and transparency, as well as wide range of other potential applications. © 2013 The Royal Society of Chemistry. 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298047 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ibrahem, Mohammed Aziz | - |
dc.contributor.author | Lan, Tian Wey | - |
dc.contributor.author | Huang, Jing Kai | - |
dc.contributor.author | Chen, Yang Yuan | - |
dc.contributor.author | Wei, Kung Hwa | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Chu, Chih Wei | - |
dc.date.accessioned | 2021-04-08T03:07:32Z | - |
dc.date.available | 2021-04-08T03:07:32Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | RSC Advances, 2013, v. 3, n. 32, p. 13193-13202 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298047 | - |
dc.description.abstract | Low-cost and large-area electronic applications require the deposition of active materials in simple and inexpensive techniques at room temperature; properties usually associated with polymer films. In this study, we demonstrate a simple, low-cost and environmentally friendly method for the high-yield production of two dimensional nanosheets of semiconducting transition metal disulfides, integrated with the route towards the solution-processed deposition of MoS and WS thin films. The resulting materials with high purity and no contamination or distortion in their structural and electronic properties were confirmed with different microscopic and macroscopic methods. As a proof of concept, we utilize these layered transition metal disulphide films as electron extraction layers in an inverted structure organic solar cell, prepared at relatively low annealing temperatures (≤150°C). A promising power conversion efficiency with high stability is achieved, which makes these proposed buffer layers quite attractive for next-generation flexible devices requiring high conductivity and transparency, as well as wide range of other potential applications. © 2013 The Royal Society of Chemistry. 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | RSC Advances | - |
dc.title | High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1039/c3ra41744a | - |
dc.identifier.scopus | eid_2-s2.0-84881539624 | - |
dc.identifier.volume | 3 | - |
dc.identifier.issue | 32 | - |
dc.identifier.spage | 13193 | - |
dc.identifier.epage | 13202 | - |
dc.identifier.eissn | 2046-2069 | - |
dc.identifier.isi | WOS:000322068400022 | - |
dc.identifier.issnl | 2046-2069 | - |