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Conference Paper: Transient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS 2

TitleTransient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS <inf>2</inf>
Authors
Docherty, Callum J.Joyce, Hannah J.Li, Lain JongJohnston, Michael B.
Issue Date2013
Citation
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013, article no. 6665785 How to Cite?
DOI: http://dx.doi.org/10.1109/IRMMW-THz.2013.6665785
AbstractMolybdenum disulpide, a novel two-dimensional semiconductor, was studied using optical-pump terahertz-probe spectroscopy. Mono and trilayer samples grown by chemical vapour deposition were compared to reveal their dynamic electrical response. © 2013 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/298067
ISSN
2162-2027
2020 SCImago Journal Rankings: 0.161

 

DC FieldValueLanguage
dc.contributor.authorDocherty, Callum J.-
dc.contributor.authorJoyce, Hannah J.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorJohnston, Michael B.-
dc.date.accessioned2021-04-08T03:07:35Z-
dc.date.available2021-04-08T03:07:35Z-
dc.date.issued2013-
dc.identifier.citationInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013, article no. 6665785-
dc.identifier.issn2162-2027-
dc.identifier.urihttp://hdl.handle.net/10722/298067-
dc.description.abstractMolybdenum disulpide, a novel two-dimensional semiconductor, was studied using optical-pump terahertz-probe spectroscopy. Mono and trilayer samples grown by chemical vapour deposition were compared to reveal their dynamic electrical response. © 2013 IEEE.-
dc.languageeng-
dc.relation.ispartofInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz-
dc.titleTransient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS <inf>2</inf>-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IRMMW-THz.2013.6665785-
dc.identifier.scopuseid_2-s2.0-84893346302-
dc.identifier.spagearticle no. 6665785-
dc.identifier.epagearticle no. 6665785-
dc.identifier.eissn2162-2035-
dc.identifier.issnl2162-2027-

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