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Article: One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film
Title | One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film |
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Authors | |
Keywords | fluorinated graphene CF plasma 4 graphene transistors |
Issue Date | 2014 |
Citation | Small, 2014, v. 10, n. 5, p. 989-997 How to Cite? |
Abstract | In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. 4 |
Persistent Identifier | http://hdl.handle.net/10722/298073 |
ISSN | 2023 Impact Factor: 13.0 2023 SCImago Journal Rankings: 3.348 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ho, Kuan I. | - |
dc.contributor.author | Liao, Jia Hong | - |
dc.contributor.author | Huang, Chi Hsien | - |
dc.contributor.author | Hsu, Chang Lung | - |
dc.contributor.author | Zhang, Wenjing | - |
dc.contributor.author | Lu, Ang Yu | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Lai, Chao Sung | - |
dc.contributor.author | Su, Ching Yuan | - |
dc.date.accessioned | 2021-04-08T03:07:36Z | - |
dc.date.available | 2021-04-08T03:07:36Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Small, 2014, v. 10, n. 5, p. 989-997 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298073 | - |
dc.description.abstract | In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. 4 | - |
dc.language | eng | - |
dc.relation.ispartof | Small | - |
dc.subject | fluorinated graphene | - |
dc.subject | CF plasma 4 | - |
dc.subject | graphene | - |
dc.subject | transistors | - |
dc.title | One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/smll.201301366 | - |
dc.identifier.scopus | eid_2-s2.0-84897585020 | - |
dc.identifier.volume | 10 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 989 | - |
dc.identifier.epage | 997 | - |
dc.identifier.eissn | 1613-6829 | - |
dc.identifier.isi | WOS:000332343400021 | - |
dc.identifier.issnl | 1613-6810 | - |