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Article: One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film

TitleOne-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film
Authors
Keywordsfluorinated graphene
CF plasma 4
graphene
transistors
Issue Date2014
Citation
Small, 2014, v. 10, n. 5, p. 989-997 How to Cite?
AbstractIn this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. 4
Persistent Identifierhttp://hdl.handle.net/10722/298073
ISSN
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHo, Kuan I.-
dc.contributor.authorLiao, Jia Hong-
dc.contributor.authorHuang, Chi Hsien-
dc.contributor.authorHsu, Chang Lung-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLai, Chao Sung-
dc.contributor.authorSu, Ching Yuan-
dc.date.accessioned2021-04-08T03:07:36Z-
dc.date.available2021-04-08T03:07:36Z-
dc.date.issued2014-
dc.identifier.citationSmall, 2014, v. 10, n. 5, p. 989-997-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/298073-
dc.description.abstractIn this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. 4-
dc.languageeng-
dc.relation.ispartofSmall-
dc.subjectfluorinated graphene-
dc.subjectCF plasma 4-
dc.subjectgraphene-
dc.subjecttransistors-
dc.titleOne-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smll.201301366-
dc.identifier.scopuseid_2-s2.0-84897585020-
dc.identifier.volume10-
dc.identifier.issue5-
dc.identifier.spage989-
dc.identifier.epage997-
dc.identifier.eissn1613-6829-
dc.identifier.isiWOS:000332343400021-
dc.identifier.issnl1613-6810-

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