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Article: Direct imaging of band profile in single layer MoS2 on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending

TitleDirect imaging of band profile in single layer MoS<inf>2</inf> on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending
Authors
Keywordsmetallic edge state
scanning tunneling microscopy/spectroscopy
band bending
Single layer molybdenum sulfide
exciton binding energy
Issue Date2014
Citation
Nano Letters, 2014, v. 14, n. 5, p. 2443-2447 How to Cite?
AbstractUsing scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS on graphite. The apparent quasiparticle energy gap of single layer MoS is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS . In the bulk region of MoS , the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states. © 2014 American Chemical Society. 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298079
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Chendong-
dc.contributor.authorJohnson, Amber-
dc.contributor.authorHsu, Chang Lung-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorShih, Chih Kang-
dc.date.accessioned2021-04-08T03:07:37Z-
dc.date.available2021-04-08T03:07:37Z-
dc.date.issued2014-
dc.identifier.citationNano Letters, 2014, v. 14, n. 5, p. 2443-2447-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298079-
dc.description.abstractUsing scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS on graphite. The apparent quasiparticle energy gap of single layer MoS is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS . In the bulk region of MoS , the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states. © 2014 American Chemical Society. 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectmetallic edge state-
dc.subjectscanning tunneling microscopy/spectroscopy-
dc.subjectband bending-
dc.subjectSingle layer molybdenum sulfide-
dc.subjectexciton binding energy-
dc.titleDirect imaging of band profile in single layer MoS<inf>2</inf> on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl501133c-
dc.identifier.pmid24783945-
dc.identifier.scopuseid_2-s2.0-84900485583-
dc.identifier.volume14-
dc.identifier.issue5-
dc.identifier.spage2443-
dc.identifier.epage2447-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000336074800032-
dc.identifier.issnl1530-6984-

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