Flexible and stretchable thin-film transistors based on molybdenum disulphide

Abstract

The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS ) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS -based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS provide significant advantages for future flexible and stretchable electronics. This journal is © the Partner Organisations 2014. 2 2 2 2