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- Publisher Website: 10.1002/smll.201302893
- Scopus: eid_2-s2.0-84903776936
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Article: Band gap-tunable molybdenum sulfide selenide monolayer alloy
Title | Band gap-tunable molybdenum sulfide selenide monolayer alloy |
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Authors | |
Keywords | transition metal dichalcogenides MoS2 band gap tuning layered materials two-dimensional materials |
Issue Date | 2014 |
Citation | Small, 2014, v. 10, n. 13, p. 2589-2594 How to Cite? |
Abstract | The optical energy gap of as-grown MoS flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 |
Persistent Identifier | http://hdl.handle.net/10722/298085 |
ISSN | 2023 Impact Factor: 13.0 2023 SCImago Journal Rankings: 3.348 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Su, Sheng Han | - |
dc.contributor.author | Hsu, Yu Te | - |
dc.contributor.author | Chang, Yung Huang | - |
dc.contributor.author | Chiu, Ming Hui | - |
dc.contributor.author | Hsu, Chang Lung | - |
dc.contributor.author | Hsu, Wei Ting | - |
dc.contributor.author | Chang, Wen Hao | - |
dc.contributor.author | He, Jr Hau | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:07:38Z | - |
dc.date.available | 2021-04-08T03:07:38Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Small, 2014, v. 10, n. 13, p. 2589-2594 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298085 | - |
dc.description.abstract | The optical energy gap of as-grown MoS flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Small | - |
dc.subject | transition metal dichalcogenides | - |
dc.subject | MoS2 | - |
dc.subject | band gap tuning | - |
dc.subject | layered materials | - |
dc.subject | two-dimensional materials | - |
dc.title | Band gap-tunable molybdenum sulfide selenide monolayer alloy | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/smll.201302893 | - |
dc.identifier.scopus | eid_2-s2.0-84903776936 | - |
dc.identifier.volume | 10 | - |
dc.identifier.issue | 13 | - |
dc.identifier.spage | 2589 | - |
dc.identifier.epage | 2594 | - |
dc.identifier.eissn | 1613-6829 | - |
dc.identifier.isi | WOS:000338992900012 | - |
dc.identifier.issnl | 1613-6810 | - |