File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Ultrafast transient terahertz conductivity of monolayer MoS2 and WSe2 grown by chemical vapor deposition

TitleUltrafast transient terahertz conductivity of monolayer MoS<inf>2</inf> and WSe<inf>2</inf> grown by chemical vapor deposition
Authors
Docherty, Callum J.Parkinson, PatrickJoyce, Hannah J.Chiu, Ming HuiChen, Chang HsiaoLee, Ming YangLi, Lain JongHerz, Laura M.Johnston, Michael B.
KeywordsPhotoluminescence
Terahertz conductivity
Ultrafast
CVD
Molybdenum disulfide
Tungsten diselenide
Transition metal dichalcogenide
Issue Date2014
Citation
ACS Nano, 2014, v. 8, n. 11, p. 11147-11153 How to Cite?
DOI: http://dx.doi.org/10.1021/nn5034746
AbstractWe have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS and WSe using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS , and 1 ps from trilayer MoS and monolayer WSe . Our results indicate the potential of these materials as high-speed optoelectronic materials. (Graph Presented). 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298099
ISSN
1936-0851
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID
WOS:000345553000016

 

DC FieldValueLanguage
dc.contributor.authorDocherty, Callum J.-
dc.contributor.authorParkinson, Patrick-
dc.contributor.authorJoyce, Hannah J.-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorLee, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHerz, Laura M.-
dc.contributor.authorJohnston, Michael B.-
dc.date.accessioned2021-04-08T03:07:40Z-
dc.date.available2021-04-08T03:07:40Z-
dc.date.issued2014-
dc.identifier.citationACS Nano, 2014, v. 8, n. 11, p. 11147-11153-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298099-
dc.description.abstractWe have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS and WSe using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS , and 1 ps from trilayer MoS and monolayer WSe . Our results indicate the potential of these materials as high-speed optoelectronic materials. (Graph Presented). 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectPhotoluminescence-
dc.subjectTerahertz conductivity-
dc.subjectUltrafast-
dc.subjectCVD-
dc.subjectMolybdenum disulfide-
dc.subjectTungsten diselenide-
dc.subjectTransition metal dichalcogenide-
dc.titleUltrafast transient terahertz conductivity of monolayer MoS<inf>2</inf> and WSe<inf>2</inf> grown by chemical vapor deposition-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1021/nn5034746-
dc.identifier.pmid25347405-
dc.identifier.scopuseid_2-s2.0-84912522406-
dc.identifier.volume8-
dc.identifier.issue11-
dc.identifier.spage11147-
dc.identifier.epage11153-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000345553000016-
dc.identifier.issnl1936-0851-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats