File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Polymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam

TitlePolymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam
Authors
Issue Date2014
Citation
Small, 2014, v. 10, n. 22, p. 4778-4784 How to Cite?
AbstractApolymer-free technique for generating nanopatterns on both synthesized and exfoliated graphene sheets is proposed and demonstrated. A low-energy (5-30 keV) scanning electron beam with variable repetition rates is used to etch suspended and unsuspended graphene sheets on designed locations. The patterning mechanisms involve a defect-induced knockout process in the initial etching stage and a heatinduced curling process in a later stage. Rough pattern edges appear due to inevitable stochastic knockout of carbon atoms or graphene structure imperfection and can be smoothed by thermal annealing. By using this technique, the minimum feature sizes achieved are about 5 nm for suspended and 7 nm for unsuspended graphene. This study demonstrates a polymer-free direct nanopatterning approach for graphene.
Persistent Identifierhttp://hdl.handle.net/10722/298100
ISSN
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLan, Yann Wen-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorXiao, Bo Tang-
dc.contributor.authorLiang, Bo Wei-
dc.contributor.authorChen, Jyun Hong-
dc.contributor.authorJiang, Pei Hsun-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorSu, Ya Wen-
dc.contributor.authorZhong, Yuan Liang-
dc.contributor.authorChen, Chii Dong-
dc.date.accessioned2021-04-08T03:07:40Z-
dc.date.available2021-04-08T03:07:40Z-
dc.date.issued2014-
dc.identifier.citationSmall, 2014, v. 10, n. 22, p. 4778-4784-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/298100-
dc.description.abstractApolymer-free technique for generating nanopatterns on both synthesized and exfoliated graphene sheets is proposed and demonstrated. A low-energy (5-30 keV) scanning electron beam with variable repetition rates is used to etch suspended and unsuspended graphene sheets on designed locations. The patterning mechanisms involve a defect-induced knockout process in the initial etching stage and a heatinduced curling process in a later stage. Rough pattern edges appear due to inevitable stochastic knockout of carbon atoms or graphene structure imperfection and can be smoothed by thermal annealing. By using this technique, the minimum feature sizes achieved are about 5 nm for suspended and 7 nm for unsuspended graphene. This study demonstrates a polymer-free direct nanopatterning approach for graphene.-
dc.languageeng-
dc.relation.ispartofSmall-
dc.titlePolymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smll.201401523-
dc.identifier.scopuseid_2-s2.0-84915789081-
dc.identifier.volume10-
dc.identifier.issue22-
dc.identifier.spage4778-
dc.identifier.epage4784-
dc.identifier.eissn1613-6829-
dc.identifier.isiWOS:000345366800031-
dc.identifier.issnl1613-6810-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats