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Article: Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der waals stacking

TitleSpectroscopic signatures for interlayer coupling in MoS<inf>2</inf>-WSe<inf>2</inf> van der waals stacking
Authors
Chiu, Ming HuiLi, Ming YangZhang, WengjingHsu, Wei TingChang, Wen HaoTerrones, MauricioTerrones, HumbertoLi, Lain Jong
Keywordsvan der Wall stacking
heterojunction
molybdenum disulfide
transition metal dichalcogenides
tungsten diselenides
interlayer coupling
Issue Date2014
Citation
ACS Nano, 2014, v. 8, n. 9, p. 9649-9656 How to Cite?
DOI: http://dx.doi.org/10.1021/nn504229z
AbstractStacking of MoS and WSe monolayers is conducted by transferring triangular MoS monolayers on top of WSe monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A for WSe (309 cm ) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E′ for MoS at 286 cm and A for MoS at around 463 cm confirm the enhancement of the interlayer coupling. 2 2 2 2 1g 2 2 1g 2 2 -1 -1 2 -1
Persistent Identifierhttp://hdl.handle.net/10722/298106
ISSN
1936-0851
2021 Impact Factor: 18.027
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID
WOS:000342184400099

 

DC FieldValueLanguage
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorZhang, Wengjing-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorTerrones, Mauricio-
dc.contributor.authorTerrones, Humberto-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:07:41Z-
dc.date.available2021-04-08T03:07:41Z-
dc.date.issued2014-
dc.identifier.citationACS Nano, 2014, v. 8, n. 9, p. 9649-9656-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298106-
dc.description.abstractStacking of MoS and WSe monolayers is conducted by transferring triangular MoS monolayers on top of WSe monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A for WSe (309 cm ) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E′ for MoS at 286 cm and A for MoS at around 463 cm confirm the enhancement of the interlayer coupling. 2 2 2 2 1g 2 2 1g 2 2 -1 -1 2 -1-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectvan der Wall stacking-
dc.subjectheterojunction-
dc.subjectmolybdenum disulfide-
dc.subjecttransition metal dichalcogenides-
dc.subjecttungsten diselenides-
dc.subjectinterlayer coupling-
dc.titleSpectroscopic signatures for interlayer coupling in MoS<inf>2</inf>-WSe<inf>2</inf> van der waals stacking-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn504229z-
dc.identifier.scopuseid_2-s2.0-84921481158-
dc.identifier.volume8-
dc.identifier.issue9-
dc.identifier.spage9649-
dc.identifier.epage9656-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000342184400099-
dc.identifier.issnl1936-0851-

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