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Conference Paper: Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

TitleFast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf>
Authors
Liu, Pang ShiuanChen, Chang HsiaoHsu, Wei TingLin, Chih PinLin, Tzu PingChi, Li JenChang, Chao YuanWu, Shih ChiehChang, Wen HaoLi, Lain JongHou, Tuo Hung
Issue Date2015
Citation
2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2014.7046992
AbstractP-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe . Because of its excellent compatibility with mass production, the application of WSe UTB-PT for high-speed proximity interactive display has been proposed. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298128
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID
WOS:000370384800030

 

DC FieldValueLanguage
dc.contributor.authorLiu, Pang Shiuan-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorLin, Chih Pin-
dc.contributor.authorLin, Tzu Ping-
dc.contributor.authorChi, Li Jen-
dc.contributor.authorChang, Chao Yuan-
dc.contributor.authorWu, Shih Chieh-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHou, Tuo Hung-
dc.date.accessioned2021-04-08T03:07:44Z-
dc.date.available2021-04-08T03:07:44Z-
dc.date.issued2015-
dc.identifier.citation2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298128-
dc.description.abstractP-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe . Because of its excellent compatibility with mass production, the application of WSe UTB-PT for high-speed proximity interactive display has been proposed. 2 2-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleFast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf>-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2014.7046992-
dc.identifier.scopuseid_2-s2.0-84938218021-
dc.identifier.isiWOS:000370384800030-
dc.identifier.issnl0163-1918-

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