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Conference Paper: Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

TitleFast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf>
Authors
Issue Date2015
Citation
2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015 How to Cite?
AbstractP-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe . Because of its excellent compatibility with mass production, the application of WSe UTB-PT for high-speed proximity interactive display has been proposed. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298128
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Pang Shiuan-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorLin, Chih Pin-
dc.contributor.authorLin, Tzu Ping-
dc.contributor.authorChi, Li Jen-
dc.contributor.authorChang, Chao Yuan-
dc.contributor.authorWu, Shih Chieh-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHou, Tuo Hung-
dc.date.accessioned2021-04-08T03:07:44Z-
dc.date.available2021-04-08T03:07:44Z-
dc.date.issued2015-
dc.identifier.citation2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298128-
dc.description.abstractP-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe . Because of its excellent compatibility with mass production, the application of WSe UTB-PT for high-speed proximity interactive display has been proposed. 2 2-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleFast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf>-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2014.7046992-
dc.identifier.scopuseid_2-s2.0-84938218021-
dc.identifier.isiWOS:000370384800030-
dc.identifier.issnl0163-1918-

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