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Article: Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

TitleHighly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers
Authors
Pu, JiangFunahashi, KazumaChen, Chang HsiaoLi, Ming YangLi, Lain JongTakenobu, Taishi
Keywordstransition metal dichalcogenide monolayers
flexible electronics
CMOS inverters
chemical vapor deposition
electric double layer transistors
Issue Date2016
Citation
Advanced Materials, 2016, v. 28, n. 21, p. 4111-4119 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201503872
AbstractComplementary inverters constructed from large-area monolayers of WSe and MoS achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298153
ISSN
0935-9648
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID
WOS:000377122400017

 

DC FieldValueLanguage
dc.contributor.authorPu, Jiang-
dc.contributor.authorFunahashi, Kazuma-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorTakenobu, Taishi-
dc.date.accessioned2021-04-08T03:07:47Z-
dc.date.available2021-04-08T03:07:47Z-
dc.date.issued2016-
dc.identifier.citationAdvanced Materials, 2016, v. 28, n. 21, p. 4111-4119-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298153-
dc.description.abstractComplementary inverters constructed from large-area monolayers of WSe and MoS achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. 2 2 2-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjecttransition metal dichalcogenide monolayers-
dc.subjectflexible electronics-
dc.subjectCMOS inverters-
dc.subjectchemical vapor deposition-
dc.subjectelectric double layer transistors-
dc.titleHighly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201503872-
dc.identifier.scopuseid_2-s2.0-84973154907-
dc.identifier.volume28-
dc.identifier.issue21-
dc.identifier.spage4111-
dc.identifier.epage4119-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000377122400017-
dc.identifier.issnl0935-9648-

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