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Article: Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

TitleIntegration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications
Authors
Issue Date2017
Citation
Carbon, 2017, v. 113, p. 318-324 How to Cite?
AbstractGraphene nanodiscs (GNDs), functionalized using NH plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 10 cm and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH plasma creates N[sbnd]H functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 10 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates. 3 3 11 −2 + 4
Persistent Identifierhttp://hdl.handle.net/10722/298185
ISSN
2023 Impact Factor: 10.5
2023 SCImago Journal Rankings: 2.171
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Jer Chyi-
dc.contributor.authorChang, Kai Ping-
dc.contributor.authorLin, Chih Ting-
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorGüneş, Fethullah-
dc.contributor.authorBoutchich, Mohamed-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorChen, Ching Hsiang-
dc.contributor.authorChen, Ching Shiun-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLai, Chao Sung-
dc.date.accessioned2021-04-08T03:07:52Z-
dc.date.available2021-04-08T03:07:52Z-
dc.date.issued2017-
dc.identifier.citationCarbon, 2017, v. 113, p. 318-324-
dc.identifier.issn0008-6223-
dc.identifier.urihttp://hdl.handle.net/10722/298185-
dc.description.abstractGraphene nanodiscs (GNDs), functionalized using NH plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 10 cm and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH plasma creates N[sbnd]H functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 10 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates. 3 3 11 −2 + 4-
dc.languageeng-
dc.relation.ispartofCarbon-
dc.titleIntegration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.carbon.2016.11.063-
dc.identifier.scopuseid_2-s2.0-85002050082-
dc.identifier.volume113-
dc.identifier.spage318-
dc.identifier.epage324-
dc.identifier.isiWOS:000392686600037-
dc.identifier.issnl0008-6223-

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