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Conference Paper: Photoluminescence enhancement in defect monolayer MoSe2 by hydrohalic acid treatment

TitlePhotoluminescence enhancement in defect monolayer MoSe<inf>2</inf> by hydrohalic acid treatment
Authors
Issue Date2016
Citation
2016 Conference on Lasers and Electro-Optics, CLEO 2016, 2016, article no. 7789241 How to Cite?
AbstractWe demonstrate that the photoluminescence emission intensity of the CVD-grown MoSe monolayers can be effectively enhanced more than 30 times after a simple hydrohalic acid treatment, providing the cost-effect manufacturing of atomically-thin two-dimensional semiconductor materials. 2
Persistent Identifierhttp://hdl.handle.net/10722/298197

 

DC FieldValueLanguage
dc.contributor.authorKao, Tsung Sheng-
dc.contributor.authorHan, Hau Vei-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorKuo, Hao Chung-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorShi, Yumeng-
dc.date.accessioned2021-04-08T03:07:53Z-
dc.date.available2021-04-08T03:07:53Z-
dc.date.issued2016-
dc.identifier.citation2016 Conference on Lasers and Electro-Optics, CLEO 2016, 2016, article no. 7789241-
dc.identifier.urihttp://hdl.handle.net/10722/298197-
dc.description.abstractWe demonstrate that the photoluminescence emission intensity of the CVD-grown MoSe monolayers can be effectively enhanced more than 30 times after a simple hydrohalic acid treatment, providing the cost-effect manufacturing of atomically-thin two-dimensional semiconductor materials. 2-
dc.languageeng-
dc.relation.ispartof2016 Conference on Lasers and Electro-Optics, CLEO 2016-
dc.titlePhotoluminescence enhancement in defect monolayer MoSe<inf>2</inf> by hydrohalic acid treatment-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1364/cleo_si.2016.sw1r.5-
dc.identifier.scopuseid_2-s2.0-85010699944-
dc.identifier.spagearticle no. 7789241-
dc.identifier.epagearticle no. 7789241-

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