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Conference Paper: A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

TitleA numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET
Authors
Issue Date2017
Citation
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 3-7 December 2016. In International Electron Devices Meeting (IEDM), 2017 How to Cite?
AbstractAn atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS junction of dichalcogenide vacancies enables Si-MoS contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology. 2 x 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298199
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTang, Ying Tsan-
dc.contributor.authorLi, Kai Shin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLin, Chang Hsien-
dc.contributor.authorChen, Yi Ju-
dc.contributor.authorChen, Chun Chi-
dc.contributor.authorSu, Chuan Jung-
dc.contributor.authorWu, Bo Wei-
dc.contributor.authorWu, Cheng San-
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorShieh, Jia Min-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorSu, Po Cheng-
dc.contributor.authorWang, Tahui-
dc.contributor.authorYang, Fu Liang-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2021-04-08T03:07:53Z-
dc.date.available2021-04-08T03:07:53Z-
dc.date.issued2017-
dc.identifier.citation2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 3-7 December 2016. In International Electron Devices Meeting (IEDM), 2017-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298199-
dc.description.abstractAn atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS junction of dichalcogenide vacancies enables Si-MoS contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology. 2 x 2 2-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleA numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2016.7838415-
dc.identifier.scopuseid_2-s2.0-85014424151-
dc.identifier.isiWOS:000399108800090-
dc.identifier.issnl0163-1918-

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