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Conference Paper: A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

TitleA numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET
Authors
Tang, Ying TsanLi, Kai ShinLi, Lain JongLi, Ming YangLin, Chang HsienChen, Yi JuChen, Chun ChiSu, Chuan JungWu, Bo WeiWu, Cheng SanChen, Min ChengShieh, Jia MinYeh, Wen KuanSu, Po ChengWang, TahuiYang, Fu LiangHu, Chenming
Issue Date2017
Citation
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 3-7 December 2016. In International Electron Devices Meeting (IEDM), 2017 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2016.7838415
AbstractAn atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS junction of dichalcogenide vacancies enables Si-MoS contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology. 2 x 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298199
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID
WOS:000399108800090

 

DC FieldValueLanguage
dc.contributor.authorTang, Ying Tsan-
dc.contributor.authorLi, Kai Shin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLin, Chang Hsien-
dc.contributor.authorChen, Yi Ju-
dc.contributor.authorChen, Chun Chi-
dc.contributor.authorSu, Chuan Jung-
dc.contributor.authorWu, Bo Wei-
dc.contributor.authorWu, Cheng San-
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorShieh, Jia Min-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorSu, Po Cheng-
dc.contributor.authorWang, Tahui-
dc.contributor.authorYang, Fu Liang-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2021-04-08T03:07:53Z-
dc.date.available2021-04-08T03:07:53Z-
dc.date.issued2017-
dc.identifier.citation2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 3-7 December 2016. In International Electron Devices Meeting (IEDM), 2017-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298199-
dc.description.abstractAn atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS junction of dichalcogenide vacancies enables Si-MoS contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology. 2 x 2 2-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleA numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2016.7838415-
dc.identifier.scopuseid_2-s2.0-85014424151-
dc.identifier.isiWOS:000399108800090-
dc.identifier.issnl0163-1918-

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