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Article: Graphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices

TitleGraphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices
Authors
KeywordsGraphene
Nanoparticle
Heterostructure
Thermoelectric
Issue Date2017
Citation
Nano Energy, 2017, v. 38, p. 385-391 How to Cite?
AbstractMonolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m  K ). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated. –1 –1
Persistent Identifierhttp://hdl.handle.net/10722/298213
ISSN
2020 Impact Factor: 17.881
2020 SCImago Journal Rankings: 5.764
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJuang, Zhen Yu-
dc.contributor.authorTseng, Chien Chih-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorHsieh, Wen Pin-
dc.contributor.authorRyuzaki, Sou-
dc.contributor.authorSaito, Noboru-
dc.contributor.authorHsiung, Chia En-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorHernandez, Yenny-
dc.contributor.authorHan, Yu-
dc.contributor.authorTamada, Kaoru-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:07:55Z-
dc.date.available2021-04-08T03:07:55Z-
dc.date.issued2017-
dc.identifier.citationNano Energy, 2017, v. 38, p. 385-391-
dc.identifier.issn2211-2855-
dc.identifier.urihttp://hdl.handle.net/10722/298213-
dc.description.abstractMonolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m  K ). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated. –1 –1-
dc.languageeng-
dc.relation.ispartofNano Energy-
dc.subjectGraphene-
dc.subjectNanoparticle-
dc.subjectHeterostructure-
dc.subjectThermoelectric-
dc.titleGraphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.nanoen.2017.06.004-
dc.identifier.scopuseid_2-s2.0-85020630023-
dc.identifier.volume38-
dc.identifier.spage385-
dc.identifier.epage391-
dc.identifier.isiWOS:000405202800045-
dc.identifier.issnl2211-2855-

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