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- Publisher Website: 10.1039/c6nh00075d
- Scopus: eid_2-s2.0-85029416709
- PMID: 32260675
- WOS: WOS:000391450000003
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Article: High-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions
Title | High-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions |
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Authors | |
Issue Date | 2017 |
Citation | Nanoscale Horizons, 2017, v. 2, n. 1, p. 37-42 How to Cite? |
Abstract | Electrical and optical properties of lateral monolayer WSe -MoS p-n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices. 2 2 -1 |
Persistent Identifier | http://hdl.handle.net/10722/298228 |
ISSN | 2023 Impact Factor: 8.0 2023 SCImago Journal Rankings: 2.089 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Tsai, Meng Lin | - |
dc.contributor.author | Li, Ming Yang | - |
dc.contributor.author | Shi, Yumeng | - |
dc.contributor.author | Chen, Lih Juann | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | He, Jr Hau | - |
dc.date.accessioned | 2021-04-08T03:07:57Z | - |
dc.date.available | 2021-04-08T03:07:57Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Nanoscale Horizons, 2017, v. 2, n. 1, p. 37-42 | - |
dc.identifier.issn | 2055-6756 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298228 | - |
dc.description.abstract | Electrical and optical properties of lateral monolayer WSe -MoS p-n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices. 2 2 -1 | - |
dc.language | eng | - |
dc.relation.ispartof | Nanoscale Horizons | - |
dc.title | High-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1039/c6nh00075d | - |
dc.identifier.pmid | 32260675 | - |
dc.identifier.scopus | eid_2-s2.0-85029416709 | - |
dc.identifier.volume | 2 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 37 | - |
dc.identifier.epage | 42 | - |
dc.identifier.eissn | 2055-6764 | - |
dc.identifier.isi | WOS:000391450000003 | - |
dc.identifier.issnl | 2055-6756 | - |