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Article: Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

TitleElectronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor
Authors
Keywordsphotoemission spectroscopy
lateral intrinsic/p-doped heterojunction
organic TMD heterostructure
scanning tunneling microscopy/spectroscopy
ThomasâFermi screening
charge transfer
Issue Date2017
Citation
ACS Nano, 2017, v. 11, n. 9, p. 9128-9135 How to Cite?
AbstractTwo-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe ), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe . At the 1D border between the doped and undoped SL-WSe regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe . These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices. 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298231
ISSN
2020 Impact Factor: 15.881
2020 SCImago Journal Rankings: 5.554

 

DC FieldValueLanguage
dc.contributor.authorSong, Zhibo-
dc.contributor.authorSchultz, Thorsten-
dc.contributor.authorDing, Zijing-
dc.contributor.authorLei, Bo-
dc.contributor.authorHan, Cheng-
dc.contributor.authorAmsalem, Patrick-
dc.contributor.authorLin, Tingting-
dc.contributor.authorChi, Dongzhi-
dc.contributor.authorWong, Swee Liang-
dc.contributor.authorZheng, Yu Jie-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorChen, Wei-
dc.contributor.authorKoch, Norbert-
dc.contributor.authorHuang, Yu Li-
dc.contributor.authorWee, Andrew Thye Shen-
dc.date.accessioned2021-04-08T03:07:57Z-
dc.date.available2021-04-08T03:07:57Z-
dc.date.issued2017-
dc.identifier.citationACS Nano, 2017, v. 11, n. 9, p. 9128-9135-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298231-
dc.description.abstractTwo-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe ), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe . At the 1D border between the doped and undoped SL-WSe regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe . These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices. 2 2 2 2-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectphotoemission spectroscopy-
dc.subjectlateral intrinsic/p-doped heterojunction-
dc.subjectorganic TMD heterostructure-
dc.subjectscanning tunneling microscopy/spectroscopy-
dc.subjectThomasâFermi screening-
dc.subjectcharge transfer-
dc.titleElectronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.7b03953-
dc.identifier.pmid28753270-
dc.identifier.scopuseid_2-s2.0-85029950766-
dc.identifier.volume11-
dc.identifier.issue9-
dc.identifier.spage9128-
dc.identifier.epage9135-
dc.identifier.eissn1936-086X-
dc.identifier.issnl1936-0851-

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