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Article: Evidence of indirect gap in monolayer WSe2

TitleEvidence of indirect gap in monolayer WSe<inf>2</inf>
Authors
Issue Date2017
Citation
Nature Communications, 2017, v. 8, n. 1, article no. 929 How to Cite?
AbstractMonolayer transition metal dichalcogenides, such as MoS and WSe , have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence of monolayer MoS and WSe . Instead of applying stress, we investigate the strain effects by imaging the direct exciton populations in monolayer WSe -MoS and MoSe -WSe lateral heterojunctions with inherent strain inhomogeneity. We find that unstrained monolayer WSe is actually an indirect gap material, as manifested in the observed photoluminescence intensity-energy correlation, from which the difference between the direct and indirect optical gaps can be extracted by analyzing the exciton thermal populations. Our findings combined with the estimated exciton binding energy further indicate that monolayer WSe exhibits an indirect quasiparticle gap, which has to be reconsidered in further studies for its fundamental properties and device applications. 2 2 2 2 2 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298236
PubMed Central ID

 

DC FieldValueLanguage
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorWang, Dean-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorChang, Tay Rong-
dc.contributor.authorChou, Yi Chia-
dc.contributor.authorJuang, Zhen Yu-
dc.contributor.authorJeng, Horng Tay-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorChang, Wen Hao-
dc.date.accessioned2021-04-08T03:07:58Z-
dc.date.available2021-04-08T03:07:58Z-
dc.date.issued2017-
dc.identifier.citationNature Communications, 2017, v. 8, n. 1, article no. 929-
dc.identifier.urihttp://hdl.handle.net/10722/298236-
dc.description.abstractMonolayer transition metal dichalcogenides, such as MoS and WSe , have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence of monolayer MoS and WSe . Instead of applying stress, we investigate the strain effects by imaging the direct exciton populations in monolayer WSe -MoS and MoSe -WSe lateral heterojunctions with inherent strain inhomogeneity. We find that unstrained monolayer WSe is actually an indirect gap material, as manifested in the observed photoluminescence intensity-energy correlation, from which the difference between the direct and indirect optical gaps can be extracted by analyzing the exciton thermal populations. Our findings combined with the estimated exciton binding energy further indicate that monolayer WSe exhibits an indirect quasiparticle gap, which has to be reconsidered in further studies for its fundamental properties and device applications. 2 2 2 2 2 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleEvidence of indirect gap in monolayer WSe<inf>2</inf>-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41467-017-01012-6-
dc.identifier.pmid29030548-
dc.identifier.pmcidPMC5640683-
dc.identifier.scopuseid_2-s2.0-85031701329-
dc.identifier.volume8-
dc.identifier.issue1-
dc.identifier.spagearticle no. 929-
dc.identifier.epagearticle no. 929-
dc.identifier.eissn2041-1723-
dc.identifier.issnl2041-1723-

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