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Conference Paper: Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

TitleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Authors
Matsuoka, HirofumiKanahashi, KaitoTanaka, NaokiShoji, YoshiakiLi, Lain JongPu, JiangIto, HiroshiOhta, HiromichiFukushima, TakanoriTakenobu, Taishi
Issue Date2018
Citation
Japanese Journal of Applied Physics, 2018, v. 57, n. 2, suppl. 2, article no. 02CB15 How to Cite?
DOI: http://dx.doi.org/10.7567/JJAP.57.02CB15
AbstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes B (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C F ) B] , can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe ) films. Upon doping, the sheet resistance of large-area polycrystalline WSe monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq. 2 6 5 4 2 2 + -
Persistent Identifierhttp://hdl.handle.net/10722/298245
ISSN
0021-4922
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID
WOS:000425734800026

 

DC FieldValueLanguage
dc.contributor.authorMatsuoka, Hirofumi-
dc.contributor.authorKanahashi, Kaito-
dc.contributor.authorTanaka, Naoki-
dc.contributor.authorShoji, Yoshiaki-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorPu, Jiang-
dc.contributor.authorIto, Hiroshi-
dc.contributor.authorOhta, Hiromichi-
dc.contributor.authorFukushima, Takanori-
dc.contributor.authorTakenobu, Taishi-
dc.date.accessioned2021-04-08T03:07:59Z-
dc.date.available2021-04-08T03:07:59Z-
dc.date.issued2018-
dc.identifier.citationJapanese Journal of Applied Physics, 2018, v. 57, n. 2, suppl. 2, article no. 02CB15-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/298245-
dc.description.abstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes B (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C F ) B] , can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe ) films. Upon doping, the sheet resistance of large-area polycrystalline WSe monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq. 2 6 5 4 2 2 + --
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.titleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.7567/JJAP.57.02CB15-
dc.identifier.scopuseid_2-s2.0-85040942242-
dc.identifier.volume57-
dc.identifier.issue2, suppl. 2-
dc.identifier.spagearticle no. 02CB15-
dc.identifier.epagearticle no. 02CB15-
dc.identifier.eissn1347-4065-
dc.identifier.isiWOS:000425734800026-
dc.identifier.issnl0021-4922-

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