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Article: Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

TitleMultidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In<inf>2</inf>Se<inf>3</inf>
Authors
Keywordsnanogenerator and electronic skin
piezoelectricity
van der Waals crystal
monolayer and bulk
multidirection
Issue Date2018
Citation
ACS Nano, 2018, v. 12, n. 5, p. 4976-4983 How to Cite?
AbstractPiezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer α-In Se . Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In Se , attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d piezoelectric coefficient of α-In Se increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd-even effect. In addition, we also demonstrate a type of α-In Se -based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in α-In Se flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics. 2 2 3 2 3 33 2 3 2 3 2 3
Persistent Identifierhttp://hdl.handle.net/10722/298265
ISSN
2020 Impact Factor: 15.881
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXue, Fei-
dc.contributor.authorZhang, Junwei-
dc.contributor.authorHu, Weijin-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorHan, Ali-
dc.contributor.authorLeung, Siu Fung-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorWan, Yi-
dc.contributor.authorLiu, Shuhai-
dc.contributor.authorZhang, Junli-
dc.contributor.authorHe, Jr Hau-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorWang, Zhong Lin-
dc.contributor.authorZhang, Xixiang-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:02Z-
dc.date.available2021-04-08T03:08:02Z-
dc.date.issued2018-
dc.identifier.citationACS Nano, 2018, v. 12, n. 5, p. 4976-4983-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298265-
dc.description.abstractPiezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer α-In Se . Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In Se , attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d piezoelectric coefficient of α-In Se increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd-even effect. In addition, we also demonstrate a type of α-In Se -based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in α-In Se flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics. 2 2 3 2 3 33 2 3 2 3 2 3-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectnanogenerator and electronic skin-
dc.subjectpiezoelectricity-
dc.subjectvan der Waals crystal-
dc.subjectmonolayer and bulk-
dc.subjectmultidirection-
dc.titleMultidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In<inf>2</inf>Se<inf>3</inf>-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.8b02152-
dc.identifier.pmid29694024-
dc.identifier.scopuseid_2-s2.0-85047650683-
dc.identifier.volume12-
dc.identifier.issue5-
dc.identifier.spage4976-
dc.identifier.epage4983-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000433404500098-
dc.identifier.issnl1936-0851-

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