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Article: Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy

TitleNanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy
Authors
Issue Date2018
Citation
Journal of Physical Chemistry C, 2018, v. 122, n. 25, p. 13564-13571 How to Cite?
AbstractNanomaterials are interesting for a variety of applications, such as optoelectronics and photovoltaics. However, they often have spatial heterogeneity, i.e., composition change or physical change in the topography or structure, which can lead to varying properties that would influence their applications. New techniques must be developed to understand and correlate spatial heterogeneity with changes in electronic properties. Here we highlight the technique of surface photovoltage Kelvin probe force microscopy (SPV-KFM), which is a modified version of noncontact atomic force microscopy capable of imaging not only the topography and surface potential but also the surface photovoltage on the nanoscale. We demonstrate its utility in probing monolayer WSe -MoS lateral heterostructures, which form an ultrathin p-n junction promising for photovoltaic and optoelectronic applications. We show surface photovoltage maps highlighting the different photoresponse of the two material regions as a result of the effective charge separation across this junction. Additionally, we study the variations between different heterostructure flakes and emphasize the importance of controlling the synthesis and transfer of these materials to obtain consistent properties and measurements. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298272
ISSN
2023 Impact Factor: 3.3
2023 SCImago Journal Rankings: 0.957
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorShearer, Melinda J.-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorJin, Song-
dc.contributor.authorHamers, Robert J.-
dc.date.accessioned2021-04-08T03:08:03Z-
dc.date.available2021-04-08T03:08:03Z-
dc.date.issued2018-
dc.identifier.citationJournal of Physical Chemistry C, 2018, v. 122, n. 25, p. 13564-13571-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/298272-
dc.description.abstractNanomaterials are interesting for a variety of applications, such as optoelectronics and photovoltaics. However, they often have spatial heterogeneity, i.e., composition change or physical change in the topography or structure, which can lead to varying properties that would influence their applications. New techniques must be developed to understand and correlate spatial heterogeneity with changes in electronic properties. Here we highlight the technique of surface photovoltage Kelvin probe force microscopy (SPV-KFM), which is a modified version of noncontact atomic force microscopy capable of imaging not only the topography and surface potential but also the surface photovoltage on the nanoscale. We demonstrate its utility in probing monolayer WSe -MoS lateral heterostructures, which form an ultrathin p-n junction promising for photovoltaic and optoelectronic applications. We show surface photovoltage maps highlighting the different photoresponse of the two material regions as a result of the effective charge separation across this junction. Additionally, we study the variations between different heterostructure flakes and emphasize the importance of controlling the synthesis and transfer of these materials to obtain consistent properties and measurements. 2 2-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleNanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.jpcc.7b12579-
dc.identifier.scopuseid_2-s2.0-85049399893-
dc.identifier.volume122-
dc.identifier.issue25-
dc.identifier.spage13564-
dc.identifier.epage13571-
dc.identifier.eissn1932-7455-
dc.identifier.isiWOS:000437811500041-
dc.identifier.issnl1932-7447-

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