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Article: Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit

TitleRoom-Temperature Ferroelectricity in Hexagonally Layered α-In<inf>2</inf>Se<inf>3</inf> Nanoflakes down to the Monolayer Limit
Authors
Keywordshexagonal α-In Se 2 3
layered 2D materials
monolayer
room-temperature ferroelectricity
Issue Date2018
Citation
Advanced Functional Materials, 2018, v. 28, n. 50, article no. 1803738 How to Cite?
Abstract2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-In Se nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-In Se nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-In Se are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics. 2 3 2 3 2 3
Persistent Identifierhttp://hdl.handle.net/10722/298286
ISSN
2022 Impact Factor: 19.0
2020 SCImago Journal Rankings: 6.069
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXue, Fei-
dc.contributor.authorHu, Weijin-
dc.contributor.authorLee, Ko Chun-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorZhang, Junwei-
dc.contributor.authorTang, Hao Ling-
dc.contributor.authorHan, Ali-
dc.contributor.authorHsu, Wei Ting-
dc.contributor.authorTu, Shaobo-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLien, Chen Hsin-
dc.contributor.authorHe, Jr Hau-
dc.contributor.authorZhang, Zhidong-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorZhang, Xixiang-
dc.date.accessioned2021-04-08T03:08:05Z-
dc.date.available2021-04-08T03:08:05Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Functional Materials, 2018, v. 28, n. 50, article no. 1803738-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/298286-
dc.description.abstract2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-In Se nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-In Se nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-In Se are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics. 2 3 2 3 2 3-
dc.languageeng-
dc.relation.ispartofAdvanced Functional Materials-
dc.subjecthexagonal α-In Se 2 3-
dc.subjectlayered 2D materials-
dc.subjectmonolayer-
dc.subjectroom-temperature ferroelectricity-
dc.titleRoom-Temperature Ferroelectricity in Hexagonally Layered α-In<inf>2</inf>Se<inf>3</inf> Nanoflakes down to the Monolayer Limit-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adfm.201803738-
dc.identifier.scopuseid_2-s2.0-85055288407-
dc.identifier.volume28-
dc.identifier.issue50-
dc.identifier.spagearticle no. 1803738-
dc.identifier.epagearticle no. 1803738-
dc.identifier.eissn1616-3028-
dc.identifier.isiWOS:000456421000002-
dc.identifier.issnl1616-301X-

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