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Article: Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants

TitleDemonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS<inf>2</inf> and molecular dopants
Authors
Issue Date2019
Citation
Communications Physics, 2019, v. 2, n. 1, article no. 109 How to Cite?
AbstractTuning the Fermi level (E ) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve E -adjustment. Here, we demonstrate that the charge transfer (CT) mechanism between TMDC and molecular dopant depends critically on the electrical nature of the substrate as well as its electronic coupling with the TMDC. Using angle-resolved ultraviolet and X-ray photoelectron spectroscopy, we reveal three fundamentally different, substrate-dependent CT mechanisms between the molecular electron acceptor 1,3,4,5,7,8-hexafluoro-tetracyano-naphthoquinodimethane (F TCNNQ) and a MoS monolayer. Our results demonstrate that any substrate that acts as charge reservoir for dopant molecules can prohibit factual doping of a TMDC monolayer. On the other hand, the three different CT mechanisms can be exploited for the design of advanced heterostructures, exhibiting tailored electronic properties in (opto-)electronic devices based on two-dimensional semiconductors. F F 6 2
Persistent Identifierhttp://hdl.handle.net/10722/298328

 

DC FieldValueLanguage
dc.contributor.authorPark, Soohyung-
dc.contributor.authorSchultz, Thorsten-
dc.contributor.authorXu, Xiaomin-
dc.contributor.authorWegner, Berthold-
dc.contributor.authorAljarb, Areej-
dc.contributor.authorHan, Ali-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorTung, Vincent C.-
dc.contributor.authorAmsalem, Patrick-
dc.contributor.authorKoch, Norbert-
dc.date.accessioned2021-04-08T03:08:10Z-
dc.date.available2021-04-08T03:08:10Z-
dc.date.issued2019-
dc.identifier.citationCommunications Physics, 2019, v. 2, n. 1, article no. 109-
dc.identifier.urihttp://hdl.handle.net/10722/298328-
dc.description.abstractTuning the Fermi level (E ) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve E -adjustment. Here, we demonstrate that the charge transfer (CT) mechanism between TMDC and molecular dopant depends critically on the electrical nature of the substrate as well as its electronic coupling with the TMDC. Using angle-resolved ultraviolet and X-ray photoelectron spectroscopy, we reveal three fundamentally different, substrate-dependent CT mechanisms between the molecular electron acceptor 1,3,4,5,7,8-hexafluoro-tetracyano-naphthoquinodimethane (F TCNNQ) and a MoS monolayer. Our results demonstrate that any substrate that acts as charge reservoir for dopant molecules can prohibit factual doping of a TMDC monolayer. On the other hand, the three different CT mechanisms can be exploited for the design of advanced heterostructures, exhibiting tailored electronic properties in (opto-)electronic devices based on two-dimensional semiconductors. F F 6 2-
dc.languageeng-
dc.relation.ispartofCommunications Physics-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleDemonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS<inf>2</inf> and molecular dopants-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s42005-019-0212-y-
dc.identifier.scopuseid_2-s2.0-85072957737-
dc.identifier.volume2-
dc.identifier.issue1-
dc.identifier.spagearticle no. 109-
dc.identifier.epagearticle no. 109-
dc.identifier.eissn2399-3650-
dc.identifier.issnl2399-3650-

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