Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS<inf>2</inf> Channel Directly Grown on SiO<inf>x</inf>/Si Substrates Using Area-Selective CVD Technology

Abstract

For high-volume manufacturing of 2-D transistors, area-selective chemical reaction deposition (CVD) growth is able to provide good-quality 2-D layers and may be more effective than exfoliation from bulk crystals or wet/dry transfer of large-area as-grown 2-D layers. We have successfully grown continuous and uniform WS film comprising around seven layers by area-selective CVD approach using patterned tungsten source/drain metals as the seeds. The growth mechanism is inferred and supported by the transmission electron microscope (TEM) images, as well. The first top-gate MOSFETs of CVD-WS channels on SiO /Si substrates are demonstrated to have good short channel electrical characteristics: ON-/OFF-ratio of 10 , a subthreshold swing of 97 mV/decade, and nearly zero drain-induced barrier lowering (DIBL). 2 2 x 6