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Conference Paper: High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

TitleHigh On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping
Authors
Chou, Ang ShengShen, Pin ChunCheng, Chao ChingLu, Li SyuanChueh, Wei ChenLi, Ming YangPitner, GregoryChang, Wen HaoWu, Chih I.Kong, JingLi, Lain JongWong, H. S.Philip
Issue Date2020
Citation
Digest of Technical Papers - Symposium on VLSI Technology, 2020, v. 2020-June, article no. 9265040 How to Cite?
DOI: http://dx.doi.org/10.1109/VLSITechnology18217.2020.9265040
AbstractWe demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.
Persistent Identifierhttp://hdl.handle.net/10722/298370
ISSN
0743-1562
2020 SCImago Journal Rankings: 1.190

 

DC FieldValueLanguage
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorShen, Pin Chun-
dc.contributor.authorCheng, Chao Ching-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorChueh, Wei Chen-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorPitner, Gregory-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorWu, Chih I.-
dc.contributor.authorKong, Jing-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWong, H. S.Philip-
dc.date.accessioned2021-04-08T03:08:16Z-
dc.date.available2021-04-08T03:08:16Z-
dc.date.issued2020-
dc.identifier.citationDigest of Technical Papers - Symposium on VLSI Technology, 2020, v. 2020-June, article no. 9265040-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/298370-
dc.description.abstractWe demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.-
dc.languageeng-
dc.relation.ispartofDigest of Technical Papers - Symposium on VLSI Technology-
dc.titleHigh On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSITechnology18217.2020.9265040-
dc.identifier.scopuseid_2-s2.0-85098112157-
dc.identifier.volume2020-June-
dc.identifier.spagearticle no. 9265040-
dc.identifier.epagearticle no. 9265040-
dc.identifier.issnl0743-1562-

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